低功耗电子和清洁能源应用的垂直硅纳米线平台</T.。itle> <link href="//www.newsama.com/static/themes/hindawi/base.css" rel="stylesheet"> <link href="https://static-01.hindawi.com/next_assets/ROIjnaKw_H8OUEtgga6i7/static/lib/basictable.css" rel="stylesheet" media="none" class="next-head"> <link rel="stylesheet" href="https://static-01.hindawi.com/next_assets/ROIjnaKw_H8OUEtgga6i7/static/lib/owl.carousel.min.css" media="none" class="next-head"> <link rel="stylesheet" href="https://static-01.hindawi.com/next_assets/ROIjnaKw_H8OUEtgga6i7/static/lib/owl.theme.default.min.css" media="none" class="next-head"> <link rel="stylesheet" type="text/css" href="https://cdn.bibblio.org/rcm/4.18/bib-related-content.min.css" media="none" class="next-head"> <link rel="stylesheet" type="text/css" href="https://cdn.bibblio.org/rcm/4.18/bib-related-content.min.css" media="none" class="next-head"> <link rel="stylesheet" href="https://static-01.hindawi.com/next_assets/ROIjnaKw_H8OUEtgga6i7/_next/static/css/common.33f8c8c9.chunk.css"> 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.expand_btn{-webkit-flex:1;-ms-flex:1;flex:1;background:url('data:image/svg+xml;base64,PD94bWwgdmVyc2lvbj0iMS4wIiBlbmNvZGluZz0iVVRGLTgiPz4KPHN2ZyB3aWR0aD0iMTZweCIgaGVpZ2h0PSIxNnB4IiB2aWV3Qm94PSIwIDAgMTYgMTYiIHZlcnNpb249IjEuMSIgeG1sbnM9Imh0dHA6Ly93d3cudzMub3JnLzIwMDAvc3ZnIiB4bWxuczp4bGluaz0iaHR0cDovL3d3dy53My5vcmcvMTk5OS94bGluayI+CiAgICA8IS0tIEdlbmVyYXRvcjogU2tldGNoIDUzLjIgKDcyNjQzKSAtIGh0dHBzOi8vc2tldGNoYXBwLmNvbSAtLT4KICAgIDx0aXRsZT5JY29ucy9DbG9zZSBNZW51IC08L3RpdGxlPgogICAgPGRlc2M+Q3JlYXRlZCB3aXRoIFNrZXRjaC48L2Rlc2M+CiAgICA8ZGVmcz4KICAgICAgICA8cGF0aCBkPSJNMTMsMTEgTDE5LDExIEMxOS41NTIyODQ3LDExIDIwLDExLjQ0NzcxNTMgMjAsMTIgQzIwLDEyLjU1MjI4NDcgMTkuNTUyMjg0NywxMyAxOSwxMyBMMTMsMTMgTDEzLDE5IEMxMywxOS41NTIyODQ3IDEyLjU1MjI4NDcsMjAgMTIsMjAgQzExLjQ0NzcxNTMsMjAgMTEsMTkuNTUyMjg0NyAxMSwxOSBMMTEsMTMgTDUsMTMgQzQuNDQ3NzE1MjUsMTMgNCwxMi41NTIyODQ3IDQsMTIgQzQsMTEuNDQ3NzE1MyA0LjQ0NzcxNTI1LDExIDUsMTEgTDExLDExIEwxMSw1IEMxMSw0LjQ0NzcxNTI1IDExLjQ0NzcxNTMsNCAxMiw0IEMxMi41NTIyODQ3LDQgMTMsNC40NDc3MTUyNSAxMyw1IEwxMywxMSBaIiBpZD0icGF0aC0xIj48L3BhdGg+CiAgICA8L2RlZnM+CiAgICA8ZyBpZD0iUGFnZS0xIiBzdHJva2U9Im5vbmUiIHN0cm9rZS13aWR0aD0iMSIgZmlsbD0ibm9uZSIgZmlsbC1ydWxlPSJldmVub2RkIj4KICAgICAgICA8ZyBpZD0iQXJ0aWNsZS0tLU1vYmlsZS0tLWZpZ3VyZSIgdHJhbnNmb3JtPSJ0cmFuc2xhdGUoLTIwLjAwMDAwMCwgLTg2MS4wMDAwMDApIj4KICAgICAgICAgICAgPGcgaWQ9Ikdyb3VwLTkiIHRyYW5zZm9ybT0idHJhbnNsYXRlKDAuMDAwMDAwLCAzMzAuMDAwMDAwKSI+CiAgICAgICAgICAgICAgICA8ZyBpZD0iR3JvdXAtOCIgdHJhbnNmb3JtPSJ0cmFuc2xhdGUoMC4wMDAwMDAsIDUwNi4wMDAwMDApIj4KICAgICAgICAgICAgICAgICAgICA8ZyBpZD0iR3JvdXAtNyIgdHJhbnNmb3JtPSJ0cmFuc2xhdGUoMC4wMDAwMDAsIDE2LjAwMDAwMCkiPgogICAgICAgICAgICAgICAgICAgICAgICA8ZyBpZD0iSWNvbnMvT3Blbi1NZW51LSsiIHRyYW5zZm9ybT0idHJhbnNsYXRlKDEzLjAwMDAwMCwgMi4wMDAwMDApIj4KICAgICAgICAgICAgICAgICAgICAgICAgICAgIDxnIGlkPSJwbHVzIiB0cmFuc2Zvcm09InRyYW5zbGF0ZSgzLjAwMDAwMCwgMy4wMDAwMDApIj4KICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgICA8bWFzayBpZD0ibWFzay0yIiBmaWxsPSJ3aGl0ZSI+CiAgICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgIDx1c2UgeGxpbms6aHJlZj0iI3BhdGgtMSI+PC91c2U+CiAgICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgPC9tYXNrPgogICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgIDx1c2UgaWQ9IkNvbWJpbmVkLVNoYXBlIiBmaWxsPSIjMDAwMDAwIiBmaWxsLXJ1bGU9Im5vbnplcm8iIHhsaW5rOmhyZWY9IiNwYXRoLTEiPjwvdXNlPgogICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgIDxnIGlkPSJDT0xPUi8tUHJpbWFyeS1HcmVlbiIgbWFzaz0idXJsKCNtYXNrLTIpIiBmaWxsPSIjNkJBNDM5IiBmaWxsLXJ1bGU9ImV2ZW5vZGQiPgogICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgICA8cmVjdCBpZD0iUmVjdGFuZ2xlIiB4PSIwIiB5PSIwIiB3aWR0aD0iMjQiIGhlaWdodD0iMjQiPjwvcmVjdD4KICAgICAgICAgICAgICAgICAgICAgICAgICAgICAgICA8L2c+CiAgICAgICAgICAgICAgICAgICAgICAgICAgICA8L2c+CiAgICAgICAgICAgICAgICAgICAgICAgIDwvZz4KICAgICAgICAgICAgICAgICAgICA8L2c+CiAgICAgICAgICAgICAgICA8L2c+CiAgICAgICAgICAgIDwvZz4KICAgICAgICA8L2c+CiAgICA8L2c+Cjwvc3ZnPg==') no-repeat 6px;background-position:center;margin-top:10px;min-width:55px;display:none;} @media (min-width:768px){.iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption .expand_btn{display:none;}} .iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption .caption-text{-webkit-flex:9;-ms-flex:9;flex:9;text-align:left;padding:21px 37px 10px 0px;font-size:16px;font-weight:700;} @media (min-width:768px){.iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption .caption-text{padding:19px 18px 10px 18px;}} @media (min-width:992px){.iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption .caption-text{padding:19px 21px 10px 21px;}} .iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption .caption-partial-url{-webkit-flex:1;-ms-flex:1;flex:1;background:url('data:image/svg+xml;base64,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') no-repeat 6px;background-position:center;padding:16px 0 16px 0;min-width:62px;max-width:62px;} @media (min-width:768px){.iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption .caption-partial-url{padding:16px 0 17px 0;min-width:52px;max-width:52px;}} @media (min-width:992px){.iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption .caption-partial-url{padding:15px 0 17px 0;min-width:60px;max-width:60px;}} .iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption .caption-partial-url:hover{-webkit-text-decoration:none;text-decoration:none;} .iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption-text{font-size:14px;padding:0px 18px 17px 22px;} @media (min-width:768px){.iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption-text{padding:0px 15px 15px 18px;}} @media (min-width:992px){.iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption-text{padding:0px 18px 19px 21px;}} .iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption-text figcaption{margin:0;padding:0;} .iASKvs .floats-partial-section .floats-partial-footer .floats-partial-caption-text svg{max-width:100%;} .iASKvs ol{font-size:16px;padding-left:32px;font-family:STIXGeneral-Regular;line-height:24px;margin:15px 0;} .iASKvs ol li{margin:10px 0;padding-left:10px;word-break:normal;} .iASKvs ol li a{word-break:break-all;} .iASKvs ol li .reflinks{display:block;} .iASKvs ol li .reflinks a{color:#4D8A17;-webkit-text-decoration:none;text-decoration:none;cursor:pointer;} .iASKvs ol li .reflinks a:hover{-webkit-text-decoration:underline;text-decoration:underline;} .iASKvs ol li .reflinks .sep{color:#000000;} .iASKvs .table-wrapper{width:auto;overflow-x:auto;} .iASKvs .table-wrapper::-webkit-scrollbar{-webkit-appearance:none;width:5px;height:5px;} .iASKvs .table-wrapper::-webkit-scrollbar-thumb{border-radius:5px;background-color:rgba(0,0,0,.5);-webkit-box-shadow:0 0 1px rgba(255,255,255,.5);} @media (min-width:768px){.iASKvs .table-wrapper{overflow-x:auto;width:auto;-webkit-break-word:word-break;break-word:word-break;margin:0 auto;}} @media (min-width:992px){.iASKvs .table-wrapper{width:auto;}} @media (min-width:1324px){.iASKvs .table-wrapper{width:auto;}} @media (min-width:320px){.iASKvs{margin-bottom:33px;padding:0;}} @media (min-width:992px){.iASKvs{padding:0;margin-bottom:100px;}} @media (min-width:1325px){.iASKvs{margin-bottom:100px;}} .iASKvs .owl-stage{display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;} .iASKvs .floats-partial-middle--thumbs{display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;} .iASKvs .floats-partial-middle--thumbs .partial-carousel-dot svg{fill:#4D8A17;width:100%;} .iASKvs .floats-partial-middle--thumbs .partial-carousel-dot strong{color:#4D8A17;font-weight:500;} .iASKvs .floats-partial-middle--thumbs .partial-carousel-dot.active strong{color:#007B8B;} .iASKvs .floats-partial-middle--thumbs .partial-carousel-dot.active svg{fill:#007B8B;} .iASKvs .partial-carousel-dot{text-align:center;cursor:pointer;border:0;width:100px;padding-bottom:20px;background-color:#fff;display:table-cell;} .iASKvs .partial-carousel-dot:focus-visible{outline-offset:-3px;} .iASKvs .partial-carousel-dot strong{font-size:11px;padding-top:12px;} @media (min-width:767.5px){.iASKvs .partial-carousel-dot strong{font-size:16px;}} .iASKvs .partial-carousel-dot img{width:90px;height:90px;border:1px solid #979797;margin:10px 0;} .iASKvs .partial-carousel-wrapper .floats-partial-middle{border-top:1px solid #e3e3e3;display:block;margin-bottom:50px;padding-top:1px;} @media (min-width:767.5px){.iASKvs .partial-carousel-wrapper .floats-partial-middle{display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;margin-bottom:0;}} .iASKvs .partial-carousel--single-image{overflow:hidden;text-align:center;} .iASKvs .partial-carousel--single-image 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class="articleContent__ArticleWrapper-sc-2yl9jy-2 hAzjHP"> <div class="sc-chbbiW mBGSe article_header_class"> <div class="sc-kxynE fgGykB"> <span class="sc-cooIXK gQxyld">特殊的问题</S.。P.。一种N><H2Class="sc-fcdeBU bVtmCk">半导体纳米线和纳米管：从基本上到不同的应用</H2><一种Class="sc-htpNat bUhGXt link sc-gmeYpB hSHJbi" href="//www.newsama.com/journals/jnt/si/647208/" aria-label="">查看此特殊问题</一种><HR.Class="sc-clNaTc ktFfKO"> </div> <p class="sc-kZmsYB bkiEfx article_type">审查文章|开放访问</P.。><D.iv class="sc-RcBXQ ztvYg article_citation"> 体积 2012年 <span class="sc-fZwumE cUsFHx">|</S.。P.。一种N>文章的ID 492121 <span class="sc-fZwumE cUsFHx">|</S.。P.。一种N><一种Class="sc-htpNat bUhGXt link sc-fQejPQ duuwge" href="https://doi.org/10.1155/2012/492121" aria-label="Doi-link">https://doi.org/10.1155/2012/492121</一种></D.iv> <div class="sc-LKuAh lcOiDF article_full_citation"> <div class="sc-hzNEM gsmOCv isHide"> <p>D.-L。陈志贤，王思明，李永华，沈南生，释达居，余永华，李士杰，辛格，罗国强那 “<S.。P.。一种NClass="adjust-article-svg-size">低功耗电子和清洁能源应用的垂直硅纳米线平台</S.。P.。一种N>“，<i>纳米技术杂志》</i>那 卷。2012年那 文章的ID492121那 21.   页面那 2012年． https://doi.org/10.1155/2012/492121</P.。></D.iv> <button class="sc-hSdWYo etauus sc-iBEsjs kPshFw" color="">显示引文</button> </div> <h1 class="sc-iRbamj jZOxOO sc-iSDuPN drIPpp article_title adjust-article-svg-size heading-title">低功耗电子和清洁能源应用的垂直硅纳米线平台</H1></D.iv> <div class="sc-jrIrqw eHMFfo article_authors"> <hr class="sc-cEvuZC XkrFe hr__author"> <span class="">D.-L。邝那<S.。up>1</S.。up></span> <span class="">x李那<S.。up>1那2</S.。up></span> <span class="">y的太阳那<S.。up>1那2</S.。up></span> <span class="">g·拉马纳坦那<S.。up>1那2</S.。up></span> <span class="">z . x陈那<S.。up>1</S.。up></span> <span class="">s·m·黄那<S.。up>1那2</S.。up></span> <span class="">y李那<S.。up>1那3.</S.。up></span> <span class="">n美国沈那<S.。up>1</S.。up></span> <span class="">K. Buddharaju.那<S.。up>1</S.。up></span> <span class="">Y. H. Yu.那<S.。up>1那2</S.。up></span> <span class="">S. J. Lee.那<S.。up>1那3.</S.。up></span> <span class="">n辛格<S.。up>1</S.。up><i class="">et al。</i></span> <span class="isHide"><b>G. Q.LO.</b><a class="sc-htpNat bUhGXt link" href="mailto:" aria-label="Mail Option"><span class="sc-htoDjs kNoiZu sc-hjRWVT irNWJI icon-colored _2zt-1j0LmaF8UjTQAM413G icon-themeable" title="" font-size="16"></span></a><sup>1</S.。up></span> <div class="sc-fHxwqH dMuGGA isHide"> <p><sup>1</S.。up><span>微电子研究所，a<S.。up>*</S.。up>Star（科学，技术和研究代理），新加坡11科技园区</S.。P.。一种N></P.><P.><sup>2</S.。up><span>新加坡南阳科技大学电气电子工程系</S.。P.。一种N></P.><P.><sup>3.</S.。up><span>新加坡国立大学电子与计算机工程系，新加坡</S.。P.。一种N></P.></D.iv> <button class="sc-hSdWYo etauus sc-iQtOjA kfDwZY" color="">展示更多</button> </div> <div class="articleContent__EditorWrapper-sc-2yl9jy-3 evMkvU"> <div class="articleContent__TextWrapper-sc-2yl9jy-8 fYrLtk"> <b>学术编辑器:</b>Qihua熊</D.iv> <div class="articleContent__PublicationTimeLineWrapper-sc-2yl9jy-4 fjviok"> <div class="articleContent__PublcationCol-sc-2yl9jy-5 hgKieC notPublished"> <span class="articleContent__PublicationField-sc-2yl9jy-6 cIribm">收到了</S.。P.。一种N><S.P.一种NClass="articleContent__PublicationValue-sc-2yl9jy-7 khHUcu">2011年5月01</S.。P.。一种N></D.iv> <div class="articleContent__PublcationCol-sc-2yl9jy-5 hgKieC notPublished"> <span class="articleContent__PublicationField-sc-2yl9jy-6 cIribm">公认</S.。P.。一种N><S.P.一种NClass="articleContent__PublicationValue-sc-2yl9jy-7 khHUcu">2011年5月25日</S.。P.。一种N></D.iv> <div class="articleContent__PublcationCol-sc-2yl9jy-5 hgKieC isPublished"> <span class="articleContent__PublicationField-sc-2yl9jy-6 cIribm">发表</S.。P.。一种N><S.P.一种NClass="articleContent__PublicationValue-sc-2yl9jy-7 khHUcu">2011年8月04</S.。P.。一种N></D.iv> </div> </div> <article class="sc-jtRlXQ iASKvs article_body "> <div> <div class="xml-content"> <h4 class="header" id="abstract">摘要</H4.><P.>本文综述了垂直自顶向下纳米线技术平台的研究进展，该平台旨在探索绿色电子和清洁能源应用的新型器件架构和集成方案。在电子学领域，除了具有最终的缩放潜力外，垂直导线还提供了(1)与平面晶体管相比，在同一技术节点上具有更小的足迹的CMOS电路，(2)隧道式fet的自然平台，(3)制造堆叠的非易失性存储单元的路径。在清洁能源收集区，垂直电线可以提供(1)通过增强的光捕获降低光伏能量转换的成本，(2)一个完全兼容CMOS的热电发动机将废热转化为电能。在综述研究进展的基础上，讨论了垂直纳米线平台所面临的挑战和未来发展前景。</P.。><S.。P.。一种NClass="end-abs"></span> <h4 id="introduction">1.介绍</H4.><P.>自20世纪90年代末以来，纳米线已经成为纳米科学和纳米技术领域的热门词汇，在技术重要和应用丰富的领域有许多前景、演示和惊喜。例如，纳米线器件，特别是在gate -全能(GAA)架构中，已经成为推动互补金属-氧化物-半导体(CMOS)扩展的领跑者。这些器件提供了独特的优势，相对于他们的平面对手和其他竞争者，这使它们成为15纳米和超过技术节点的选择，通过模拟已经证明了10纳米通道长度器件[<一种HR.E.F=“#B1">1</一种>]和实验[<一种HR.E.F=“#B2">2</一种>］.实际上，圆柱形几何结构给出了栅极电容与通道直径的对数反比关系，因此，这些器件中的栅极长度可以随导线直径而缩放，而不需要大幅降低栅极介质厚度。基于同样的原理，GAA纳米线结构也成为硅-氧化物-氮化氧化物-硅(SONOS)型非易失性存储应用的优秀候选人，在这些应用中栅介质必须更厚。化学和生物传感是另一个重要的领域，大的表面体积比提高了检测限，使纳米线传感器成为潜在的候选者[<一种HR.E.F=“#B3">3.</一种>那<一种HR.E.F=“#B4">4.</一种>］.巨大的压阻系数和降低的低频噪声使纳米线适合于传感器世界[<一种HR.E.F=“#B5">5.</一种>］.纳米线还在光子学区域中显示出优异的潜力[<一种HR.E.F=“#B6">6.</一种>，收集太阳能[<一种HR.E.F=“#B7">7.</一种>那<一种HR.E.F=“#B8">8.</一种>]和能量存储[<一种HR.E.F=“#B9">9.</一种>］.从根本上说，纳米线器件性能的改善是光子、声子和电子的形状、密度和强约束以及它们相对于平面体结构的变化的结果。</P.。><P.。>纳米线的制造技术大致可分为两类:(i)自底向上和(ii)自顶向下。涉及纳米线合成的自下而上方法已在文献中广泛综述[<一种HR.E.F=“#B10">10.</一种>-<一种HR.E.F=“#B12">12.</一种>并在此不再作详细讨论。</P.。><P.。>自上而下的方法从图形定义开始，主要使用传统的光刻，接着是图形转移，然后修剪，以减少导线的直径到纳米级。虽然各向同性湿法腐蚀可用于修剪线材直径，但自限氧化工艺通常用于更好的过程控制，并已在本研究所广泛开发[<一种HR.E.F=“#B13">13.</一种>］.</P.。><P.。>在本文中，我们从低功耗电子器件和清洁能源应用视点审查了我们自上而下的垂直纳米线技术平台的进展。侧纳米线平台聚焦逻辑，非易失性存储器和生物传感应用的综述已发布[<一种HR.E.F=“#B13">13.</一种>因此，因此不会包括在这里。垂直平台解决了横向纳米线的大部分制造相关的挑战，例如，电线下的栅极定义，电线上的栅极蚀刻，光刻，自由栅极长度控制，与任何侧面相比，通过较小的脚印提供CMOS电路。（包括平面，翅片，纳米线）MOS晶体管处于相同的技术节点。垂直，它脱源/漏极（S / D）植入过程，因此作为用于隧穿FET的自然平台，允许独立调谐S / D连接和植入物类型，以实现低亚阈值斜率（SS）并抑制Ampolar行为。除了类似于CMOS的占地面积之外，垂直线上的非易失性存储器件沿线长度垂直堆叠。在绿色电子标题下，部分<一种HR.E.F=“#sec2">2</一种>通过垂直方法讨论缩放，然后在三个电子设备上进行了进步，即金属氧化物 - 半导体场效应晶体管（MOSFET），隧道场效应晶体管（TFET）和Sonos非易失性存储器（NVM）;全部以GAA格式制造。在部分<一种HR.E.F=“#sec3">3.</一种>，我们讨论清洁能量收集，在太阳能电池上显示通过增强的光捕获和吸收的性能改善，以及将废热转化为电力的完全CMOS兼容热电发动机。讨论了垂直纳米线的挑战和未来前景<一种HR.E.F=“#sec4">4.</一种>．最后,部分<一种HR.E.F=“#sec5">5.</一种>总结了纸。</P.。><H4.id="low-power-electronics">2.低功耗电子器件</H4.><H5.id="sec2.1">２.１.垂直法缩放</H5.><P.>垂直纳米线器件，彼此顶部的源极，漏极和栅极端子，比图中所述的平面占用更少的区域<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig1/" target="_blank">1</一种>．在半场的方面“<S.。vg height="10.325" id="M1" style="vertical-align:-0.0pt;width:12.05px;" version="1.1" viewbox="0 0 12.05 10.325" width="12.05" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.325)"> <g transform="translate(72,-63.74)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> 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style="font-size: 12.50px; " x="0" y="0"> 4.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="6.2515001" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-56.16,66.03)"> <tspan style="font-size: 8.75px; " x="0" y="0"> 2</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>因此，给定技术节点将脚印减少50％。当连接在一起进行制造电路时，影响更为甚至更多，例如，使用的CMOS逆变器<S.。vg height="13.9875" id="M4" style="vertical-align:-0.17555pt;width:33.775002px;" version="1.1" viewbox="0 0 33.775002 13.9875" width="33.775002" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,13.9875)"> <g transform="translate(72,-60.81)"> <text transform="matrix(1,0,0,-1,-71.95,61.03)"> <tspan style="font-size: 12.50px; " x="0" y="0"> 4.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="6.2515001" y="0"> 0.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.503" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-49.91,66.03)"> <tspan style="font-size: 8.75px; " x="0" y="0"> 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style="font-size: 12.50px; " x="9.2522202" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>-常数增加~6.1 ×(例如，简单地<S.。vg height="14.1875" id="M9" style="vertical-align:-2.72116pt;width:57.712502px;" version="1.1" viewbox="0 0 57.712502 14.1875" width="57.712502" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.1875)"> <g transform="translate(72,-60.65)"> <text transform="matrix(1,0,0,-1,-71.95,63.41)"> <tspan style="font-size: 12.50px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="6.9516678" y="0"> P.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="13.203168" y="0"> E.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="18.754499" y="0"> E.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="24.305832" y="0"> D.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="34.020664" y="0"> ∝</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="16.75" id="M10" style="vertical-align:-2.21957pt;width:116.5625px;" 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fig-content-tab1"> <table class="table-group" id="tab1"> <tbody> <tr> <td> <table class="table"> <tbody> <tr> <td class="thead-hr" colspan="4"> <hr></td> </tr> <tr class="thead"> <td align="left"></td> <td align="center">平面</T.。D.><T.D.一种lign="center">nw（侧面）</T.。D.><T.D.一种lign="center">西北(垂直)</T.。D.></T.R.><T.R.> <td class="thead-hr" colspan="4"> <hr></td> </tr> <tr> <td align="left">设备电路区域（<S.。vg height="10.55" id="M13" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 11.325 10.55" width="11.325" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.55)"> <g transform="translate(72,-63.56)"> <text transform="matrix(1,0,0,-1,-71.95,63.61)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>）</T.。D.><T.D.一种lign="center"> <svg height="13.9875" id="M14" style="vertical-align:-0.17555pt" version="1.1" viewbox="0 0 25.9625 13.9875" width="25.9625" xmlns="http://www.w3.org/2000/svg"> <g 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</table></td> </tr> </tbody> </table> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">表格1</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/tab1/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> 横向和纵向纳米线器件的平面基准测试。</D.iv> </div> </div> <div class="floats-partial-section partial-carousel-wrapper" data-section="fig1"> <div class="floats-partial-content fig-content-fig1"> <div class="partial-carousel--single-image"> <img alt="" name="492121.fig.001" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.001.jpg"> <br> <strong></strong> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图1</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig1/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <table> （a）横向和（b）垂直Gaa纳米线MOSFET和相应的CMOS逆变器的占地面积的示意图。</T.。一种ble> </div> </div> </div> <p>尽管从门控角度来看，横向导线的缩放电位与横向导线相同，但垂直导线设备在足迹缩放方面领先于横向导线，其次是速度和功率优势。事实上，侧线装置的脚印仍然存在<S.。vg height="13.9875" id="M29" style="vertical-align:-0.17555pt;width:25.9625px;" version="1.1" viewbox="0 0 25.9625 13.9875" width="25.9625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,13.9875)"> <g transform="translate(72,-60.81)"> <text transform="matrix(1,0,0,-1,-71.95,61.03)"> <tspan style="font-size: 12.50px; " x="0" y="0"> 8.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="6.2515001" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-56.16,66.03)"> <tspan style="font-size: 8.75px; " x="0" y="0"> 2</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>，与平面设备相同。然而，在电路电平时，横向纳米线可以比平面装置更好，因为它可以允许与横向线的堆叠匹配，例如，从翅片中形成两根线[<一种HR.E.F=“#B14">14.</一种>]并使用兼顾PMOS的通道，但只有一个用于NMOS。相反，垂直设备中的电流匹配是可以在脚印的栅极长度缩放中匹配。此外，垂直方法是解决与横向纳米线相关的设计和制造问题的途径。例如，定义均匀门是挑战，因为等离子体蚀刻中的阴影效果可能不允许清除侧根区域下方的栅极材料。预计垂直的Gaa纳米线晶体管是有前途的候选者，因为没有阴影效果问题，并且栅极长度可以由膜沉积和蚀刻而不是光刻来限定。</P.。><H5.id="sec2.2">2.2。整合可行性</H5.><P.>我们使用Gaa垂直纳米线CMOS晶体管作为测试车辆，在8''硅晶片上开发垂直平台[<一种HR.E.F=“#B15">15.</一种>］.其制作工艺步骤如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig2/" target="_blank">2</一种>．如图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig3/" target="_blank">3.</一种>扫描电子显微镜（SEM）图像作为各种制造阶段拍摄。使用深紫紫外线（DUV）光刻后图案化了不同直径（从160nm至600nm）的圆形抗蚀剂点，然后是1 <i>μ</i>使用SF的深度Si蚀刻<S.。ub>6.</S.。ub>抗蚀剂面罩下的化学。可以根据器件设计调谐蚀刻深度。然后将Si柱在1150℃下氧化待转化为纳米线。使用高温来降低生长氧化物的粘度，确保在柱的中心处的光滑圆柱形Si芯。由于高曲率下应力增加，柱底部的氧化速率低[<一种HR.E.F=“#B16">16.</一种>那<一种HR.E.F=“#B17">17.</一种>］.然后在稀释的HF (DHF)中剥离生长的氧化物。制备的纳米线的SEM图像如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig3/" target="_blank">3(一个)</一种>和<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig3/" target="_blank">3 (d)</一种>．</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig2"> <div class="floats-partial-content fig-content-fig2"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.002a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.002b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(c)“N一种mE.=“4.9.21.21。Fig.002c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002c.jpg"> <br> <strong>(c)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（d）“N一种mE.=“4.9.21.21。Fig.002d" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002d.jpg"> <br> <strong>（d）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（e）“N一种mE.=“4.9.21.21。Fig.002e" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002e.jpg"> <br> <strong>（e）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（F）“N一种mE.=“4.9.21.21。Fig.002f" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002f.jpg"> <br> <strong>（F）</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig2"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.002a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.002b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(c)"><img alt="(c)“N一种mE.=“4.9.21.21。Fig.002c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002c.jpg"><br><strong>(c)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(d)"><img alt="（d）“N一种mE.=“4.9.21.21。Fig.002d" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002d.jpg"><br><strong>（d）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(e)"><img alt="（e）“N一种mE.=“4.9.21.21。Fig.002e" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002e.jpg"><br><strong>（e）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(f)"><img alt="（F）“N一种mE.=“4.9.21.21。Fig.002f" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.002f.jpg"><br><strong>（F）</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig2"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图2</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig2/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <a href="#B15">15.</一种><T.一种ble> (a)单硅纳米线在底部隔离,(b)门堆栈沉积后,门后(c)扩展板定义和黄芪丹参滴丸氧化物沉积之后,腐蚀长度定义门,(d)成功地结束帽去除后,氧化(e)的S / d和门植入(单对所有三个电极植入)(f)金属化后的最终装置。（转载许可[］.[2008] IEEE。）</T.。一种ble> </div> </div> </div> <div class="floats-partial-section partial-carousel-wrapper" data-section="fig3"> <div class="floats-partial-content fig-content-fig3"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.003a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.003a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.003b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.003b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(c)“N一种mE.=“4.9.21.21。Fig.003c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.003c.jpg"> <br> <strong>(c)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（d）“N一种mE.=“4.9.21.21。Fig.003d" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.003d.jpg"> <br> <strong>（d）</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig3"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.003a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.003a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.003b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.003b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(c)"><img alt="(c)“N一种mE.=“4.9.21.21。Fig.003c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.003c.jpg"><br><strong>(c)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(d)"><img alt="（d）“N一种mE.=“4.9.21.21。Fig.003d" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.003d.jpg"><br><strong>（d）</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig3"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图3.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig3/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <i>μ</i> <a href="#B15">15.</一种><T.一种ble> 不同制备阶段的SEM照片。(a)垂直纳米线，直径约20 nm;(b)在光刻栅极图案之后，但在暴露晶体管的漏极(支柱尖端)之前;(c)漏极(支柱尖端)暴露后，准备进行金属接触，(d)间距为500 nm的垂直纳米线阵列。纳米线是1直径约20纳米。（转载许可[］.[2008] IEEE。）</T.。一种ble> </div> </div> </div> <p>垂直形成纳米线之后是250 nm厚的高密度等离子体(HDP)氧化物沉积层和使用DHF(1:25)的湿蚀刻背层。由于非共形沉积，HDP沉积导致底部表面的氧化物较厚，而沿着纳米线侧壁的氧化物较薄。后湿etch-back<i>〜</i>150纳米，厚的氧化物仍然覆盖在垂直站立的电线的基础上。这种技术将栅极与源扩展衬垫分离，从而降低栅极至源边缘的电容。栅氧化层的<i>〜</i>然后在暴露的线表面上热生长5nm，然后沉积30nm poly-si，用作栅电极（图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig3/" target="_blank">3 (b)</一种>）．然后在抗蚀剂掩模下图案化并蚀刻栅极垫，该抗蚀剂掩模覆盖纳米线并提供用于栅极接触的多聚延伸部。在栅极焊盘蚀刻之后，重复湿蚀刻后的HDP氧化物沉积的过程，以在纳米线的顶部接近纳米线的顶部，同时保护更早限定的栅极焊盘。然后通过低射频功率SF对外蚀刻暴露的聚-Si<S.。ub>6.</S.。ub>等离子体。或者，可以在湿的四甲基氢氧化铵（TMAH）溶液中除去该帽。然后在DHF中完全剥离晶片上的氧化物（图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig3/" target="_blank">3 (c)</一种>）和As (1 × 10<S.。up>15.</S.。up> cm<S.up>-2</S.。up>/ 10kev）从四个方向植入四次，分开90度，具有大的倾斜角度（45度），然后进行快速的热退火和标准金属化过程。</P.。><P.。>数字<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig4/" target="_blank">4.</一种>显示频道直径的NMOS的典型特性<i>〜</i>20nm和通道直径PMOS<i>〜</i>40纳米，通道长度均为150纳米。该器件表现出非常好的性能，具有陡开(SS~75至100 mV/dec)、强门静电控制(极低的漏极诱导势垒降低(DIBL)(10至50 mV/V))和高<S.。vg height="14.7125" id="M30" style="vertical-align:-3.22282pt;width:52.799999px;" version="1.1" viewbox="0 0 52.799999 14.7125" width="52.799999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.7125)"> <g transform="translate(72,-60.23)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.37)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> N</T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-53.78,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> /</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="3.4758339" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-44.3,60.37)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> F</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="7.2904158" y="0"> F</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>比(<i>〜</i>10.<S.。up>7.</S.。up>)．然而，阈值电压<S.。vg height="14.35" id="M31" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>，使用Poly-Si门远低于将这些器件集成到电路中所需的所需[<一种HR.E.F=“#B18">18.</一种>-<一种HR.E.F=“#B21">21.</一种>］.</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig4"> <div class="floats-partial-content fig-content-fig4"> <div class="partial-carousel--single-image"> <img alt="" name="492121.fig.004" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.004.jpg"> <br> <strong></strong> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图4.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig4/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <table> GaA N-和PFET的传递特性显示在理想的亚阈值摆动附近表示优异的静电控制。</T.。一种ble> </div> </div> </div> <p>由于通道体积小，传统的通道掺杂很难在纳米线上实现，可能会产生显著的效果<S.。vg height="14.35" id="M32" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>由于掺杂剂的波动以及迁移率的下降而引起的波动。更好的方法<S.。vg height="14.35" id="M33" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>调整是通过门功功能的调整。我们已经实现了NiSi全硅化(FUSI)和TiN栅极，两者都有未掺杂的纳米线通道。TiN对N和P器件具有较好的对称性，而FUSI栅极在gate poly-Si中具有较好的植入性。数字<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig5/" target="_blank">5.</一种>给出了FUSI门器件的SEM图像<S.。vg height="14.35" id="M34" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>锡和Fusi栅极设备的值。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig5"> <div class="floats-partial-content fig-content-fig5"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.005a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.005a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.005b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.005b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig5"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.005a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.005a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.005b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.005b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig5"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图5.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig5/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <sub>2</S.。ub> <sub>4.</S.。ub> <sub>2</S.。ub> <sub>2</S.。ub> <sub>2</S.。ub> <svg height="14.35" id="M35" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="14.35" id="M36" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <table> （a）硅化（440°C，30秒）后Fusi栅极装置的扫描电子显微镜（SEM）图像并在H中除去未反应的Ni所以: HO.。。: HO.。的解决方案。(b)的箱形图每个分裂的测量装置的分布。用线性外推法提取了10个以上的设备。</T.。一种ble> </div> </div> </div> <p>这<S.。vg height="14.35" id="M37" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>-调整装置显示明显<S.。vg height="14.35" id="M38" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>变化(<S.。vg height="14.675" id="M39" style="vertical-align:-3.22281pt;width:29.612499px;" version="1.1" viewbox="0 0 29.612499 14.675" width="29.612499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.675)"> <g transform="translate(72,-60.26)"> <text transform="matrix(1,0,0,-1,-71.95,63.52)"> <tspan style="font-size: 12.50px; " x="0" y="0"> Δ</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="9.0271664" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-55.73,60.4)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>，如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig5/" target="_blank">5 (b)</一种>．TiN PMOS和多栅NMOS最低<S.。vg height="14.35" id="M40" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>（<i>〜</i>-0.38 v和-0.22 v），其次是调谐fusi门设备（<i>〜</i>-0.15 v）和fusi门设备（<i>〜</i>0.07 V)，而TiN NMOS的电压最高<S.。vg height="14.35" id="M41" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>（<i>〜</i>0.42 v）。锡门显示出巨大的调整潜力<S.。vg height="14.35" id="M42" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>用于垂直SiNW mosfet，使其能够集成到低待机功率电路中。</P.。><H5.id="sec2.3">2.3。将MOSFET转为隧道FET</H5.><P.>由于无源功率的过度增加，放大MOSFET以提高器件性能和增加器件密度面临着22 nm节点以外的巨大挑战。这是由于SS的不可扩展性限制了MOSFET阈值电压的进一步降低，<S.。vg height="14.35" id="M43" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>，并因此提供电压，<S.。vg height="14.35" id="M44" style="vertical-align:-3.22281pt;width:20.674999px;" version="1.1" viewbox="0 0 20.674999 14.35" width="20.674999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> D.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> D.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>．为了克服这个问题和设计更节能的设备，需要替代低SS晶体管设计。其中一种装置是TFET [<一种HR.E.F=“#B22">22.</一种>-<一种HR.E.F=“#B28">28.</一种>］.不同于MOSFET利用热离子注入载流子，TFET使用隧道效应作为载流子注入机制。因此，在室温下，fet有可能实现低OFF状态电流以及SS低于mosfet理论极限60 mV/decade。tfet本质上是门控p+−i<i>−</i>在反向偏压下工作的n +二极管，可以作为n-或p-tfet运行。通过用栅极控制I区域，可以在P + -I（n-TFET中，创建隧道屏障（N-TFET，<S.。vg height="14.725" id="M45" style="vertical-align:-3.24037pt;width:45.1875px;" version="1.1" viewbox="0 0 45.1875 14.725" width="45.1875" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.725)"> <g transform="translate(72,-60.22)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.37)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-54.19,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> ></T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.027886" y="0"> 0.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>)或n+ - i (p-TFET，<S.。vg height="14.725" id="M46" style="vertical-align:-3.24037pt;width:45.1875px;" version="1.1" viewbox="0 0 45.1875 14.725" width="45.1875" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.725)"> <g transform="translate(72,-60.22)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.37)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-54.19,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> <</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.027886" y="0"> 0.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>载体能够隧道隧道隧道隧道的结如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig6/" target="_blank">6（a）</一种>使用带结构[<一种HR.E.F=“#B27">27.</一种>］.反向偏置的P-I-N二极管为TFET提供了低偏路的扩散电流。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig6"> <div class="floats-partial-content fig-content-fig6"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.006a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.006a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.006b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.006b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig6"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.006a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.006a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.006b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.006b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig6"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图6.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig6/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <svg height="16.2875" id="M47" style="vertical-align:-4.77652pt" version="1.1" viewbox="0 0 35.362499 16.2875" width="35.362499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,16.2875)"> <g transform="translate(72,-58.97)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-60.27,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> -</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="4.1634989" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-48.92,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <a href="#B28">28.</一种><T.一种ble> （a）TFET的带状图，显示隧道交界处，（b）以及直径70 nm、栅长200 nm、栅氧化层厚度4.5 nm的垂直SiNW型fet的特性。（转载许可[］.[2009] IEEE)。</T.。一种ble> </div> </div> </div> <p>利用我们的垂直纳米线平台，隧道效应场效应管与MOSFET相似，使用相同的掩模集，但使用相反类型的源/漏掺杂。在植入下电极时，我们使用氮化硬掩膜来保护导线顶部。如图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig6/" target="_blank">6（b）</一种>是个<S.。vg height="7.1374998" id="M48" style="vertical-align:-0.10033pt;width:7.8874998px;" version="1.1" viewbox="0 0 7.8874998 7.1374998" width="7.8874998" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,7.1375)"> <g transform="translate(72,-66.29)"> <text transform="matrix(1,0,0,-1,-71.95,66.44)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>-TFET.<S.。vg height="16.2875" id="M49" style="vertical-align:-4.77652pt;width:35.362499px;" version="1.1" viewbox="0 0 35.362499 16.2875" width="35.362499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,16.2875)"> <g transform="translate(72,-58.97)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-60.27,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> -</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="4.1634989" y="0"> </T.。S.。P.。一种N></T.E.xt> <text 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style="font-size: 12.50px; " x="12.027886" y="0"> 1</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="18.279387" y="0"> ．</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="21.405136" y="0"> 2</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>V被观察到(~10<S.。up>7.</S.。up>),<S.。vg height="14.35" id="M52" style="vertical-align:-3.22282pt;width:25.75px;" version="1.1" viewbox="0 0 25.75 14.35" width="25.75" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> F</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="7.2904158" y="0"> F</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>(在<S.。vg height="16.637501" id="M53" style="vertical-align:-4.77652pt;width:42.762501px;" version="1.1" viewbox="0 0 42.762501 16.637501" width="42.762501" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,16.6375)"> <g transform="translate(72,-58.69)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.37)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-56.13,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> =</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.027886" y="0"> 0.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>V) ~ 7pa /<i>μ</i>m和<S.。vg height="14.35" id="M54" style="vertical-align:-3.22282pt;width:22.8375px;" version="1.1" viewbox="0 0 22.8375 14.35" width="22.8375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text 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12.50px; " x="12.027886" y="0"> 1</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="18.279387" y="0"> ．</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="21.405136" y="0"> 2</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> V) of ~53 <i>μ</i>一种/<i>μ</i>M(与线周长标准化)。由此产生的最高记录<S.。vg height="14.35" id="M56" style="vertical-align:-3.22282pt;width:22.8375px;" version="1.1" viewbox="0 0 22.8375 14.35" width="22.8375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> N</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>该Si TFET的低DIBL（〜17mV / V）是GaA纳米线结构的优异栅极控制的结果。但是，所获得的70 MV / DEC的SS超出了KT / Q的极限（<i>≈</i>60 mV/dec)，可能是由于隧穿结(<S.。vg height="11.5375" id="M57" style="vertical-align:-2.29482pt;width:18.475px;" version="1.1" viewbox="0 0 18.475 11.5375" width="18.475" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,11.5375)"> <g transform="translate(72,-62.77)"> <text transform="matrix(1,0,0,-1,-71.95,65.11)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="6.1139669" y="0"> +</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="9.9250002" id="M58" style="vertical-align:-0.13794pt;width:15.6875px;" version="1.1" viewbox="0 0 15.6875 9.9250002" width="15.6875" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,9.925)"> <g transform="translate(72,-64.06)"> <text transform="matrix(1,0,0,-1,-71.95,64.25)"> <tspan style="font-size: 12.50px; " x="0" y="0"> −</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="8.5645552" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>）没有完全突然。</P.。><P.。>为了达到SS < KT/q的极限，我们通过一种新的硅化诱导掺杂剂偏析过程来改善隧道结的突发性[<一种HR.E.F=“#B29">29.</一种>]描绘在图中<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig7/" target="_blank">7.</一种>．为了在实验上证明这一点，我们使用了高度为400纳米、直径为30到200纳米的纳米线。然后在纳米线的底部垂直植入BF<S.。ub>2</S.。ub>对于PTFET和NTFET以形成TFET的漏极区域。形成隔离和栅极堆叠，其类似于呈现为MOSFET。然后源于PTFET和BF植入<S.。ub>2</S.。ub>对于NTFET，然后是硅化物，其被隔离掺杂剂以形成突然源/通道结。最后，完成接触金属化。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig7"> <div class="floats-partial-content fig-content-fig7"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.007a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.007b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(c)“N一种mE.=“4.9.21.21。Fig.007c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007c.jpg"> <br> <strong>(c)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（d）“N一种mE.=“4.9.21.21。Fig.007d" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007d.jpg"> <br> <strong>（d）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（e）“N一种mE.=“4.9.21.21。Fig.007e" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007e.jpg"> <br> <strong>（e）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（F）“N一种mE.=“4.9.21.21。Fig.007f" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007f.jpg"> <br> <strong>（F）</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig7"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.007a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.007b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(c)"><img alt="(c)“N一种mE.=“4.9.21.21。Fig.007c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007c.jpg"><br><strong>(c)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(d)"><img alt="（d）“N一种mE.=“4.9.21.21。Fig.007d" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007d.jpg"><br><strong>（d）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(e)"><img alt="（e）“N一种mE.=“4.9.21.21。Fig.007e" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007e.jpg"><br><strong>（e）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(f)"><img alt="（F）“N一种mE.=“4.9.21.21。Fig.007f" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.007f.jpg"><br><strong>（F）</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig7"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图7.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig7/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <sub>2</S.。ub> <a href="#B29">29.</一种><T.一种ble> 垂直硅纳米线fet工艺流程示意图。(a)垂直柱蚀和As注入形成漏极区，(b)隔离氧化物沉积和栅垛形成，(c)顶部非晶硅蚀刻以暴露TFET的源侧，(d) BF注入源， (e)掺杂剂分离的Ni硅化，(f)触点打开和Al金属化。（转载许可[] [2011] ieee。）</T.。一种ble> </div> </div> </div> <p>透射电子显微镜(TEM)图像显示了制备的p- fet器件的垂直截面如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig8/" target="_blank">8.</一种>．</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig8"> <div class="floats-partial-content fig-content-fig8"> <div class="partial-carousel--single-image"> <img alt="" name="492121.fig.008" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.008.jpg"> <br> <strong></strong> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图8.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig8/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <table> PTFET的横截面TEM显示出在顶部的栅极和硅化物包围的非常窄的均匀线。</T.。一种ble> </div> </div> </div> <p>数字<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig9/" target="_blank">9.</一种>显示了<S.。vg height="16.2875" id="M59" style="vertical-align:-4.77652pt;width:35.362499px;" version="1.1" viewbox="0 0 35.362499 16.2875" width="35.362499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,16.2875)"> <g transform="translate(72,-58.97)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-60.27,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> -</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="4.1634989" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-48.92,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>分别适用于pTFET和nTFET。对于pTFET和nTFET器件，十年的漏极电流平均SS为30 mV/decade。改进的原因是由于掺杂剂分离硅化，使得掺杂剂在源侧有尖锐的掺杂轮廓，这导致掺杂剂在硅化剂边缘堆积[<一种HR.E.F=“#B30">30.</一种>那<一种HR.E.F=“#B31">31.</一种>］.由于垂直纳米线平台的自然不对称，还实现了抑制非胆的传导，这有利于源极和排水的独立调整。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig9"> <div class="floats-partial-content fig-content-fig9"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.009a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.009a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.009b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.009b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig9"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.009a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.009a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.009b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.009b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig9"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图9.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig9/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <svg height="16.2875" id="M60" style="vertical-align:-4.77652pt" version="1.1" viewbox="0 0 35.362499 16.2875" width="35.362499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,16.2875)"> <g transform="translate(72,-58.97)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-60.27,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> -</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="4.1634989" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-48.92,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <table> （a）测量（a）p-tfet的特征和（b）n-tfet，具有ss = 30 mv /十年的平均在十年上平均。</T.。一种ble> </div> </div> </div> <p>SS随漏极电流的分布如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig10/" target="_blank">10 ()</一种>．在pTFET的漏极电流为30年，nTFET的漏极电流为20年以上时，SS低于60 mV/decade。由于As和BF的掺杂偏析不同，导致pTFET和nTFET的SS行为不同<S.。ub>2</S.。ub>以及晶圆间的工艺变化。纳米线直径对SS的影响如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig10/" target="_blank">10 (b)</一种>；SS随通道直径的增大而减小。当沟道变宽时，沟道区域的栅极静电控制变弱或表现为平面器件。此外，对于较大的导线，NiSi的侵入减少，因此，掺杂剂梯度在源-通道界面不太陡峭，因此SS退化。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig10"> <div class="floats-partial-content fig-content-fig10"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0010a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0010a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0010b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0010b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig10"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0010a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0010a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0010b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0010b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig10"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图10.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig10/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <svg height="14.35" id="M61" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 13.725 14.35" width="13.725" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> D.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="14.35" id="M62" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 13.725 14.35" width="13.725" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> D.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="14.35" id="M63" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 13.725 14.35" width="13.725" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> D.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="14.7125" id="M64" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 58.387501 14.7125" width="58.387501" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.7125)"> <g transform="translate(72,-60.23)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.37)"> <tspan style="font-size: 8.75px; " x="0" y="0"> D.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> S.</T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-53.01,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> =</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.027886" y="0"> 0.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="18.279387" y="0"> ．</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="21.405136" y="0"> 1</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <table> (一)SS和对于TFETS。P-TFET展示Sub-60 MV /十年挥杆3数十年，而n-TFET保持在60 mV/ 10年以下超过20年（ V). (b) SS variations on nanowire diameter of p-TFETs. SS increases as NW diameter gets wider.</T.一种ble> </div> </div> </div> <p>通过使用更高的介电常数(高-<S.。vg height="7.0124998" id="M65" style="vertical-align:-0.0pt;width:9.4125004px;" version="1.1" viewbox="0 0 9.4125004 7.0124998" width="9.4125004" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,7.0125)"> <g transform="translate(72,-66.39)"> <text transform="matrix(1,0,0,-1,-71.95,66.44)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>）隧道界面处的栅极电介质和低带隙材料，电流可以进一步增强[<一种HR.E.F=“#B32">32.</一种>那<一种HR.E.F=“#B33">33.</一种>］.我们还注意到我们的PTFET和NTFET器件之间的电流差异，即由于栅极排出突出率厚度的差异，PTFET具有〜35nm的下划线，而NTFET具有大小的左右〜100nm。排水方面的大潜水似乎是抑制NTFET电流的原因之一。需要最佳的栅极排水潜行，以进一步抑制Ampolar传导以及最大化电流。</P.。><H5.id="sec2.4">2.4。基于垂直纳米线的非易失性记忆</H5.><P.>由于对便携式电子设备的需求不断增加，非易失性存储器市场一直在蓬勃发展。目前主要采用多晶硅浮栅作为电荷存储材料的flash存储器。然而，浮动栅存储器在扩展到22nm技术节点之外的过程中面临着严峻的挑战，因为耦合比显著降低，栅干涉增加[<一种HR.E.F=“#B34">34.</一种>］.为了克服缩放问题，正在广泛研究离散电荷被捕获的设备。这些设备使用氮化硅等电荷捕获材料，高 -<S.。vg height="7.0124998" id="M66" style="vertical-align:-0.0pt;width:9.4125004px;" version="1.1" viewbox="0 0 9.4125004 7.0124998" width="9.4125004" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,7.0125)"> <g transform="translate(72,-66.39)"> <text transform="matrix(1,0,0,-1,-71.95,66.44)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>金属/硅纳米晶体代替导电的多硅浮动栅，具有简单的制造工艺，较低的编程电压，并对薄隧道氧化物中的缺陷具有强大的容错能力[<一种HR.E.F=“#B35">35.</一种>-<一种HR.E.F=“#B40">40</一种>］.然而，在离散电荷阱器件中，栅极介质厚度，例如氮化硅作为陷阱层时的氧化物-氮化氧化物(ONO)，由于数据保留的考虑，很难缩放，因此很难避免与缩放相伴的严重短通道效应问题。</P.。><P.。>从晶体管结构视点，圆柱形架构放宽了超薄栅极氧化物的要求，因此对Sonos型非易失性存储器有前途，其中较厚的隧道/横块氧化物受到更长的保留时间[<一种HR.E.F=“#B41">41.</一种>］.除了优越的栅极控制和隧道氧化物到沟道界面的电场增强，从横向纳米线基GAA SONOS电池观察到[<一种HR.E.F=“#B42">42.</一种>]，在垂直纳米线平台上制备的存储单元具有更大的意义，因为其占地面积小，具有3D多级集成的潜力[<一种HR.E.F=“#B43">43.</一种>］.</P.。><P.。>在最近的工作中，我们在直径为20 nm的垂直硅纳米线(SiNW)上制作了一种gate-全能(GAA) SONOS闪存，并具有良好的程序/擦除(P/E)、保留和持久特性[<一种HR.E.F=“#B44">44.</一种>］.通过将电荷陷阱层替换为纳米硅晶体(NC)进一步提高了性能。所制备的细胞是实现超高密度三维多层集成的重要组成部分。虽然看起来很简单，但在细胞之间形成纳米线连接时，垂直堆叠记忆细胞可能是非常具有挑战性的。为了克服结的形成问题，我们设计并制作了一种新型的无结垂直sinw基SONOS电池。无结(JL)存储器件不掺杂结，使垂直SiNW成为存储单元垂直堆叠实现超高密度应用的合适平台。内存单元的制作步骤如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig11/" target="_blank">11.</一种>详情请参阅[<一种HR.E.F=“#B45">45.</一种>］.这里要强调的是，JL-SONOS工艺首先在p型硅晶片中注入磷，然后在衬底上部进行炉退火，以创建不同浓度的均匀掺杂剖面。之后遵循传统基于结的垂直SiNW SONOS工艺流程，无需S/D注入，形成导线通道和p型掺杂多硅栅极，如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig11/" target="_blank">11.</一种>(b)。导线上没有结，使得多个细胞容易在纳米线上堆叠。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig11"> <div class="floats-partial-content fig-content-fig11"> <div class="partial-carousel--single-image"> <img alt="" name="492121.fig.0011" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0011.jpg"> <br> <strong></strong> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图11.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig11/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <i>-</i> <i>-</i> <i>-</i> <i>-</i> <a href="#B45">45.</一种><T.一种ble> (a)基于垂直SiNW结的NC-Flash过程集成流:(a-1)垂直SiNW形成;(a-2)注入形成源;(a-3)栅叠加沉积NO.。。。或O.数控O.。用于SONOS和NC-flash)和栅极板定义;(a-4)尖端poly和O-NC-O去除，然后引流种植;(5)金属化;(b)垂直JL-SONOS工艺集成流程:(b-1)大块植入和退火;(b-2)垂直SiNW组;(b-3)栅极叠加沉积和栅极垫定义;(b-4)尖端聚和ONO去除;(b-5)金属化;(c) SONOS/JL-SONOS关键工艺步骤的倾斜俯视图SEM图像(从左到右):垂直形成SiNW;门垫定义; tip poly and ONO removal; metallization. (Reprinted with permission from [］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <p>如图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig12/" target="_blank">12（a）</一种>是线径垂直Sinw Gaa JL-SONOS的横截面TEM图像，线直径等于20nm和栅极长度〜120nm。数字<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig12/" target="_blank">12（b）</一种>显示具有ONO厚度5/7/7nm的栅极堆叠的横截面TEM图像。原子力显微镜（AFM）图像超过1 <i>μ</i>m×1<i>μ</i>m区域的纳米晶体沉积在隧道氧化物(NC-flash)如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig12/" target="_blank">12（c）</一种>．它揭示了Si-NCS之间的良好均匀性和隔离，但尺寸大（直径为30±10nm），密度低（约7.5×10）<S.。up>10.</S.。up>/厘米<S.。up>-2</S.。up>），表示大量的空间以进一步改进。嵌入SIND作为诱捕层的效果如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig13/" target="_blank">(13日)</一种>通过比较NC-SOncOS与控制SiN-SONOS电池在50 nm粗线上的P/E速度。NC-SOncOS显示更大<S.。vg height="14.675" id="M67" style="vertical-align:-3.22281pt;width:29.612499px;" version="1.1" viewbox="0 0 29.612499 14.675" width="29.612499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.675)"> <g transform="translate(72,-60.26)"> <text transform="matrix(1,0,0,-1,-71.95,63.52)"> <tspan style="font-size: 12.50px; " x="0" y="0"> Δ</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="9.0271664" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-55.73,60.4)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>对于相同的P / E时间段，表示更好的充电存储能力。结果表明，使用硅纳米晶体作为电荷俘获介质的装置中的诱捕中心优于SIN的纳米，这提高了器件的捕获效率。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig12"> <div class="floats-partial-content fig-content-fig12"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0012a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0012a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0012b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0012b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(c)“N一种mE.=“4.9.21.21。Fig.0012c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0012c.jpg"> <br> <strong>(c)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig12"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0012a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0012a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0012b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0012b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(c)"><img alt="(c)“N一种mE.=“4.9.21.21。Fig.0012c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0012c.jpg"><br><strong>(c)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig12"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图12.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig12/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <i>μ</i> <sup>2</S.。up> <sup>10.</S.。up> <sup>-2</S.。up> <a href="#B45">45.</一种><T.一种ble> (a)垂直SiNW GAA JL-SONOS的横截面TEM图像:导线直径为20 nm，栅长为120 nm， (b)栅垛的横截面TEM图像显示ONO厚度为5/7/7 nm。(c) 1 × 1扫描的AFM图像mS.。。。i-NC的形成密度为7.5 × 10/厘米．（转载许可[］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <div class="floats-partial-section partial-carousel-wrapper" data-section="fig13"> <div class="floats-partial-content fig-content-fig13"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0013a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0013a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0013b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0013b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig13"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0013a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0013a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0013b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0013b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig13"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图13.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig13/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <a href="#B45">45.</一种><T.一种ble> (a)垂直sinw基NC-SOncOS与SiN-SONOS的P/E速度比较，栅极长度为150 nm，线径为50 nm。(b)垂直sinw基GAA SONOS和NC-SOncOS在85°C下的保持特性。（转载许可[］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <p>如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig13/" target="_blank">13 (b)</一种>， SiN-SONOS在10年后观察到部分窗口关闭(预计10年后约30%)<S.。up>5.</S.。up>秒85°C保持，该设备在15 V编程100<i>μ</i>−18 V擦除1毫秒。由于导带偏移而形成孤立的能量阱，因此在陷阱层中引入自旋硅原子可以显著改善电荷损失[<一种HR.E.F=“#B46">46.</一种>硅和电介质之间的关系<S.。ub>．</S.。ub>如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig13/" target="_blank">13 (b)</一种>，自加入SiNCs后，记忆保留特性有很大改善，在10<S.。up>5.</S.。up>秒保持在85°C。对于SIN-SONOS和NC-FLASH设备，已经获得了优异的耐用性。</P.。><P.。>接下来提出了结少的细胞的特征。数字<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig14/" target="_blank">14.</一种>给出了通道掺杂1 × 10的JL-SONOS的P/E特性<S.。up>17.</S.。up> cm<S.up>-3</S.。up>和1×10<S.。up>19.</S.。up> cm<S.up>-3</S.。up>分别用于固定线径为20nm。对于掺杂浓度，存储器窗口几乎相同，更精确地，3.2V用于低掺杂（1×10<S.。up>17.</S.。up> cm<S.up>-3</S.。up>）和2.7 V适度掺杂（1×10<S.。up>19.</S.。up> cm<S.up>-3</S.。up>在+15 V/−16 V时，P/E时间分别为1 ms。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig14"> <div class="floats-partial-content fig-content-fig14"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0014a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0014a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0014b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0014b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig14"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0014a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0014a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0014b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0014b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig14"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图14.</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig14/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <sup>17.</S.。up> <sup>-3</S.。up> <sup>19.</S.。up> <sup>-3</S.。up> <a href="#B45">45.</一种><T.一种ble> （a）编程和（b）使用垂直SINW的GAA JL-SONOS存储装置的FN隧道擦除特性，通道掺杂为1×10 cm和1×10 cm．（转载许可[］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <p>如图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig15/" target="_blank">15.</一种>对掺杂1 × 10的电池上测量的JL-SONOS进行多比特编程是否可行<S.。up>19.</S.。up> cm<S.up>-3</S.。up>．从图中可以明显看出，内存单元能够使用四种状态“00”、“01”、“10”和“11”存储每个单元2位，每种状态定义不同<S.。vg height="14.35" id="M68" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>> 1 V.</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig15"> <div class="floats-partial-content fig-content-fig15"> <div class="partial-carousel--single-image"> <img alt="" name="492121.fig.0015" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0015.jpg"> <br> <strong></strong> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图15</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig15/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <svg height="14.375" id="M69" style="vertical-align:-0.3135pt" version="1.1" viewbox="0 0 52.075001 14.375" width="52.075001" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.375)"> <g transform="translate(72,-60.5)"> <text transform="matrix(1,0,0,-1,-71.95,60.86)"> <tspan style="font-size: 12.50px; " x="0" y="0"> 1</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="9.0271664" y="0"> A -</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="19.804752" y="0"> 1</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="26.056252" y="0"> 0.</T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-39.64,66.03)"> <tspan style="font-size: 8.75px; " x="0" y="0"> 1</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> 9.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <sup>-3</S.。up> <a href="#B45">45.</一种><T.一种ble> JL-SONOS存储器的多比特编程特性，其门偏误为12、14和16 V。线径= 20 nm，通道掺杂=/厘米．（转载许可[］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <p>JL-SONOS在85°C下的高温保持特性如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig16/" target="_blank">16（a）</一种>．高通道掺杂的JL-SONOS（1×10<S.。up>19. </S.up>厘米<S.。up>-3</S.。up>)展品少<S.。vg height="14.35" id="M70" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>与轻掺杂JL-SONOS (1 × 10<S.。up>17.</S.。up> cm<S.up>-3</S.。up>)，其内存窗口可很好地维护到10<S.。up>5.</S.。up> sec. Under retention conditions, direct trap-to-band (TB) tunneling from a nitride traps to the channel conduction band is the main discharge mechanism. With increased channel doping, the energy states close to the channel conduction band are more likely to be occupied by electrons. This reduces the probability of further electron injection from the trap layer, and thus more reliable charge storage can be expected [<一种HR.E.F=“#B47">47.</一种>］.JL-SONOS的耐久特性如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig16/" target="_blank">16（b）</一种>，其中所有设备均可在10后维持市盈率窗口<S.。up>5.</S.。up>在85°C下循环。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig16"> <div class="floats-partial-content fig-content-fig16"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0016a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0016a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0016b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0016b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig16"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0016a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0016a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0016b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0016b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig16"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图16</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig16/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <sup>17.</S.。up> <sup>-3</S.。up> <sup>19.</S.。up> <sup>-3</S.。up> <sup>17.</S.。up> <sup>-3</S.。up> <sup>19.</S.。up> <sup>-3</S.。up> <a href="#B45">45.</一种><T.一种ble> (a)通道掺杂1 × 10的JL-SONOS存储器件在85°C下的保持特性 cm和1 × 10 cm．（b）用于85°C的耐久性，用于JL-SONOS存储器件，通道掺杂为1×10 cm和1 × 10 cm．（转载许可[］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <p>一种基于垂直SiNW JL-SONOS的可能的3D存储单元电路设计如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig17/" target="_blank">17.</一种>．在不使用选择栅极晶体管和存储器单元的结合的情况下，集成过程将被显着简化。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig17"> <div class="floats-partial-content fig-content-fig17"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0017a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0017a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0017b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0017b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig17"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0017a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0017a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0017b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0017b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig17"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图17</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig17/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <table> 基于JL-SONOS的三维多层叠置NAND原理图</T.。一种ble> </div> </div> </div> <h4 id="clean-energy">3.清洁能源</H4.><H5.id="sec3.1">3．1.垂直纳米线太阳能电池</H5.><P.>考虑Si薄膜太阳能电池，用于下一代太阳能电池，因为它为低材料和生产成本提供了一种可行的途径[<一种HR.E.F=“#B48">48.</一种>］.然而，硅薄膜的厚度远低于吸收90%或更多带隙以上光子的光学厚度[<一种HR.E.F=“#B49">49.</一种>]，限制总功率转换效率（PCE）。增强光吸收的可能方法之一是Si纳米结构在薄膜上的整合。除了许多其他光学现象之外，光的衍射与纳米结构表面起作用的关键作用，使红色光吸收不良，以更高的角度进入薄膜，从而提高吸收的机会。虽然，Si纳米线或纳米粒子（SINP）在太阳能电池应用中的利用[<一种HR.E.F=“#B49">49.</一种>-<一种HR.E.F=“#B53">53.</一种>]由于其优异的光学性能[<一种HR.E.F=“#B53">53.</一种>-<一种HR.E.F=“#B56">56.</一种>]和电气性质[<一种HR.E.F=“#B49">49.</一种>那<一种HR.E.F=“#B52">52.</一种>]但没有多少系统分析，可以指导高效太阳能电池设计。我们的小组做了一个非常基于模拟的研究[<一种HR.E.F=“#B7">7.</一种>]并随后通过实验验证[<一种HR.E.F=“#B8">8.</一种>］.我们找到了优化的矿柱直径(<S.。vg height="10.325" id="M71" style="vertical-align:-0.0pt;width:12.7px;" version="1.1" viewbox="0 0 12.7 10.325" width="12.7" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.325)"> <g transform="translate(72,-63.74)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>)是0.20<i>μ</i>m，直径/周期（<S.。vg height="10.9125" id="M72" style="vertical-align:-0.17555pt;width:28.450001px;" version="1.1" viewbox="0 0 28.450001 10.9125" width="28.450001" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.9125)"> <g transform="translate(72,-63.27)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="9.8773699" y="0"> /</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="13.353204" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>)的比率为0.5(即周期性0.4<i>μ</i>M)和高度(<S.。vg height="10.325" id="M73" style="vertical-align:-0.0pt;width:15.175px;" version="1.1" viewbox="0 0 15.175 10.325" width="15.175" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.325)"> <g transform="translate(72,-63.74)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>) 1<i>μ</i>米(<一种HR.E.F=“#B7">7.</一种>那<一种HR.E.F=“#B56">56.</一种>，其SEM图像如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig18/" target="_blank">(18日)</一种>．</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig18"> <div class="floats-partial-content fig-content-fig18"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0018a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0018a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0018b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0018b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig18"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0018a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0018a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0018b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0018b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig18"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图18</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig18/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <a href="#B8">8.</一种><T.一种ble> (a)用于模拟PCE分析的硅纳米柱状图案的SEM图像。柱径= 200 nm，间距= 400 nm，高度= 1000 nm;(b)轴结截面示意图。（转载许可[］.[2010] IEEE)。</T.。一种ble> </div> </div> </div> <p>我们全面研究了轴向和径向的光学优化结构的电气特性<S.。vg height="9.875" id="M74" style="vertical-align:-2.29482pt;width:20.737499px;" version="1.1" viewbox="0 0 20.737499 9.875" width="20.737499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,9.875)"> <g transform="translate(72,-64.1)"> <text transform="matrix(1,0,0,-1,-71.95,66.44)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="6.1139669" y="0"> -</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="10.277466" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>使用模拟的连接点。我们的仿真包括使用3D有限元方法（FEM）研究的装置的光学性质。假设光线通常在SINP阵列中发生，下午1.5克100mm厘米<S.。up>-2</S.。up>光谱。电场<S.。vg height="17.9375" id="M75" style="vertical-align:-2.21957pt;width:22.625px;" version="1.1" viewbox="0 0 22.625 17.9375" width="22.625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,17.9375)"> <g transform="translate(72,-57.65)"> <text transform="matrix(1,0,0,-1,-71.95,59.91)"> <tspan style="font-size: 12.50px; " x="0" y="0"> （</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.29" y="-2.54"> ⃗</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="4.1599998" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="13.837322" y="0"> ）</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>计算并导出到Cogenda Genius仿真管理器[<一种HR.E.F=“#B57">57.</一种>求解电流连续方程和泊松方程。电流-电压(<S.。vg height="10.575" id="M76" style="vertical-align:-0.20064pt;width:28.15px;" version="1.1" viewbox="0 0 28.15 10.575" width="28.15" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.575)"> <g transform="translate(72,-63.54)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="8.2394772" y="0"> -</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.402976" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>）SINP太阳能电池的特征遵循[<一种HR.E.F=“#B58">58.</一种>］.对器件内的载流子传输实现了漂移扩散模型。同时还考虑了冲击里德-霍尔(SRH)和俄歇复合。</P.。><P.。>我们只讨论轴结(图中的装置)<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig18/" target="_blank">18（b）</一种>）在这里。如图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig19/" target="_blank">19（a）</一种>少数载波扩散长度对短路电流的影响<S.。vg height="14.35" id="M77" style="vertical-align:-3.22281pt;width:17.362499px;" version="1.1" viewbox="0 0 17.362499 14.35" width="17.362499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>和开路电压<S.。vg height="14.35" id="M78" style="vertical-align:-3.22281pt;width:20.0625px;" version="1.1" viewbox="0 0 20.0625 14.35" width="20.0625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>．插图显示了与平面参考装置的PCE比较。可以观察到扩散长度与0.6差 <i>μ</i>M与我们的设计是可容忍的，显示光伏应用中低级Si开采的可能性，以降低生产成本[<一种HR.E.F=“#B59">59.</一种>］.实际上，假设表面复合速度为17.4％的PCE“<S.。vg height="10.725" id="M79" style="vertical-align:-0.1254pt;width:11.375px;" version="1.1" viewbox="0 0 11.375 10.725" width="11.375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.725)"> <g transform="translate(72,-63.42)"> <text transform="matrix(1,0,0,-1,-71.95,63.6)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>“= 0 cm-s<S.。up>-1</S.。up>，预测电子的小型载波扩散长度（<S.。vg height="14.8125" id="M80" style="vertical-align:-3.20526pt;width:56.174999px;" version="1.1" viewbox="0 0 56.174999 14.8125" width="56.174999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.8125)"> <g transform="translate(72,-60.15)"> <text transform="matrix(1,0,0,-1,-71.95,63.4)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-63.1,60.27)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-54.78,63.4)"> <tspan style="font-size: 12.50px; " x="0" y="0"> ≥</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.040389" y="0"> 0.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="18.291889" y="0"> ．</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="21.417639" y="0"> 6.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg><i>μ</i>m）。数字<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig19/" target="_blank">19 (b)</一种>显示光产生的载体浓度，在电线内具有清晰的浓度效果。设计在这种高度浓缩区域内的连接位置是获得高性能的关键。此外，值得一提的是，在薄膜太阳能电池中降低了大量重组，并且由于表面附近的载体密度，螺旋钻和表面重组可能增加。它对短路电流密度产生负面影响（<S.。vg height="14.35" id="M81" style="vertical-align:-3.22281pt;width:18.299999px;" version="1.1" viewbox="0 0 18.299999 14.35" width="18.299999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.2,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>)及开路电压(<S.。vg height="14.35" id="M82" style="vertical-align:-3.22281pt;width:20.0625px;" version="1.1" viewbox="0 0 20.0625 14.35" width="20.0625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>）[<一种HR.E.F=“#B60">60.</一种>]，特别是对于由于表面积增加和表面附近的吸收而具有纳米池太阳能电池。我们发现PCE减少了17.4％至15.5％<S.。vg height="10.725" id="M83" style="vertical-align:-0.1254pt;width:11.375px;" version="1.1" viewbox="0 0 11.375 10.725" width="11.375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.725)"> <g transform="translate(72,-63.42)"> <text transform="matrix(1,0,0,-1,-71.95,63.6)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>从0厘米增加<S.。up>-1</S.。up>到1000年cm-s<S.。up>-1</S.。up>，显示其有害影响[<一种HR.E.F=“#B7">7.</一种>］.</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig19"> <div class="floats-partial-content fig-content-fig19"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0019a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0019a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0019b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0019b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig19"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0019a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0019a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0019b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0019b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig19"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图19</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig19/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <svg height="14.325" id="M84" style="vertical-align:-3.20526pt" version="1.1" viewbox="0 0 17.25 14.325" width="17.25" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.325)"> <g transform="translate(72,-60.54)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-63.1,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="10.75" id="M85" style="vertical-align:-0.15048pt" version="1.1" viewbox="0 0 11.9125 10.75" width="11.9125" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.75)"> <g transform="translate(72,-63.4)"> <text transform="matrix(1,0,0,-1,-71.95,63.6)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="14.8125" id="M86" style="vertical-align:-3.20526pt" version="1.1" viewbox="0 0 56.174999 14.8125" width="56.174999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.8125)"> <g transform="translate(72,-60.15)"> <text transform="matrix(1,0,0,-1,-71.95,63.4)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-63.1,60.27)"> <tspan style="font-size: 8.75px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-54.78,63.4)"> <tspan style="font-size: 12.50px; " x="0" y="0"> =</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="12.040389" y="0"> 0.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="18.291889" y="0"> ．</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="21.417639" y="0"> 6.</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <i>μ</i> <a href="#B59">59.</一种><T.一种ble> (a) SiNP织构太阳能电池在不同条件下的短路电流和开路电压．Inset是SINP纹理和未致纹化太阳能电池的效率;（b）照片生成的载体概况在Si Nanopillar纹理薄膜太阳能电池经[］.[2010] IEEE)。</T.。一种ble> </div> </div> </div> <p>接下来我们介绍了我们的轴向结纳米玻璃太阳能电池的实验结果，其制造细节可用于[<一种HR.E.F=“#B8">8.</一种>］.由于优化后的SiNP阵列纹理显著增强了光吸收，短路电流密度(<S.。vg height="14.35" id="M87" style="vertical-align:-3.22281pt;width:18.299999px;" version="1.1" viewbox="0 0 18.299999 14.35" width="18.299999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.2,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>)为34.3 mA/cm<S.。up>2</S.。up>在SINP表面纹理太阳能电池内的轴向p-n结上实现，这是报道的SI纳米线（SINW）/ SINP的太阳能电池中最高的最高日期。这与之明显的比较<S.。vg height="14.35" id="M88" style="vertical-align:-3.22281pt;width:18.299999px;" version="1.1" viewbox="0 0 18.299999 14.35" width="18.299999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.2,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>18.1 mA /厘米<S.。up>2</S.。up>在没有SiNP的太阳能电池上进行了演示。</P.。><P.。>在图中示出<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig20/" target="_blank">20(一个)</一种>和<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig20/" target="_blank">20 (b)</一种>分别为纳米柱基和平面太阳电池的显微镜图像。可以清楚地观察到，由于其卓越的抗反射特性，纹理太阳能电池比非纹理太阳能电池显得更暗。与我们之前的理论预测一致，如图所示，SiNP直径为200 nm时反射最小<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig20/" target="_blank">20 (c)</一种>（例如,<S.。vg height="10.9125" id="M89" style="vertical-align:-0.17555pt;width:28.450001px;" version="1.1" viewbox="0 0 28.450001 10.9125" width="28.450001" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.9125)"> <g transform="translate(72,-63.27)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="9.8773699" y="0"> /</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="13.353204" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>是0.5）[<一种HR.E.F=“#B7">7.</一种>那<一种HR.E.F=“#B56">56.</一种>］.</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig20"> <div class="floats-partial-content fig-content-fig20"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0020a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0020a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0020b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0020b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(c)“N一种mE.=“4.9.21.21。Fig.0020c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0020c.jpg"> <br> <strong>(c)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig20"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0020a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0020a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0020b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0020b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(c)"><img alt="(c)“N一种mE.=“4.9.21.21。Fig.0020c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0020c.jpg"><br><strong>(c)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig20"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图20</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig20/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <a href="#B8">8.</一种><T.一种ble> (a) SiNP织构和(b)未织构太阳能电池(没有顶部TCO层)的照片。(c)变参数反射光谱。（转载许可[］.[2010] IEEE)。</T.。一种ble> </div> </div> </div> <p>测量外部量子效率(EQE)来研究光吸收和载流子分离/载流子收集的效率(图)<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig21/" target="_blank">21.</一种>）．发射器的掺杂浓度（带接合深度为250nm）和后表面为10<S.。up>20.</S.。up> cm<S.up>-3</S.。up>，基地的掺杂水平为10<S.。up>16.</S.。up> cm<S.up>-3</S.。up>在设备中。照明条件为1.5g，即100 mw cm<S.。up>-2</S.。up>．数字<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig21/" target="_blank">21.</一种>描绘了作为SINP直径的太阳光谱主能量范围的EQE。SINP阵列纹理设备的EQE远高于未构造的设备，表明光子更有效地吸收。通过SINP阵列纹理的设备<S.。vg height="10.325" id="M90" style="vertical-align:-0.0pt;width:12.7px;" version="1.1" viewbox="0 0 12.7 10.325" width="12.7" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.325)"> <g transform="translate(72,-63.74)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>200nm(或<S.。vg height="10.9125" id="M91" style="vertical-align:-0.17555pt;width:28.450001px;" version="1.1" viewbox="0 0 28.450001 10.9125" width="28.450001" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.9125)"> <g transform="translate(72,-63.27)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="9.8773699" y="0"> /</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="13.353204" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>0.5）和<S.。vg height="10.325" id="M92" style="vertical-align:-0.0pt;width:15.175px;" version="1.1" viewbox="0 0 15.175 10.325" width="15.175" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.325)"> <g transform="translate(72,-63.74)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>1000 nm具有最佳的EQE（> 200％的未致纹化一体），暗示具有优化表面纹理的样品的优异光捕获和载体提取能力。结果也与上述反射测量和仿真结果相匹配<一种HR.E.F=“#B7">7.</一种>］.</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig21"> <div class="floats-partial-content fig-content-fig21"> <div class="partial-carousel--single-image"> <img alt="" name="492121.fig.0021" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0021.jpg"> <br> <strong></strong> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图21</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig21/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <sup>-2</S.。up> <a href="#B8">8.</一种><T.一种ble> 外部量子效率对于各种柱直径，显示200nm柱直径为am 1.5g 100 mwcm的最佳结果照明。（转载许可[］.[2010] IEEE)。</T.。一种ble> </div> </div> </div> <p>短路电流“<S.。vg height="14.35" id="M93" style="vertical-align:-3.22281pt;width:18.299999px;" version="1.1" viewbox="0 0 18.299999 14.35" width="18.299999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.2,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>“在AM 1.5 G 100mw cm下测量<S.。up>-2</S.。up>具有各种直径的纳米玻璃装置的照明如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig22/" target="_blank">(22日)</一种>以及图中的模拟电流 - 电压图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig22/" target="_blank">22 (b)</一种>．测量<S.。vg height="14.35" id="M94" style="vertical-align:-3.22281pt;width:18.299999px;" version="1.1" viewbox="0 0 18.299999 14.35" width="18.299999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.2,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>随着越来越多地增加<S.。vg height="10.9125" id="M95" style="vertical-align:-0.17555pt;width:28.450001px;" version="1.1" viewbox="0 0 28.450001 10.9125" width="28.450001" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.9125)"> <g transform="translate(72,-63.27)"> <text transform="matrix(1,0,0,-1,-71.95,63.5)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="9.8773699" y="0"> /</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="13.353204" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>比例，趋势与模拟结果和EQE数据吻合良好。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig22"> <div class="floats-partial-content fig-content-fig22"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0022a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0022a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0022b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0022b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig22"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0022a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0022a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0022b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0022b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig22"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图22</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig22/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <svg height="14.35" id="M96" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 18.299999 14.35" width="18.299999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.2,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <sup>-2</S.。up> <a href="#B8">8.</一种><T.一种ble> （a）测量作为Si Nanopillar直径的函数，下午1.5克100mMCM（b)模拟Si纳米柱状薄膜太阳能电池的J-V特性(底层Si薄膜为~800 nm)。（转载许可[］.[2010] IEEE)。</T.。一种ble> </div> </div> </div> <p>这<S.。vg height="14.35" id="M97" style="vertical-align:-3.22281pt;width:18.299999px;" version="1.1" viewbox="0 0 18.299999 14.35" width="18.299999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.2,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>SiNP表面织构器件的最大强度为~31.4 mA/cm<S.。up>2</S.。up>用柱子<S.。vg height="10.325" id="M98" style="vertical-align:-0.0pt;width:12.7px;" version="1.1" viewbox="0 0 12.7 10.325" width="12.7" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.325)"> <g transform="translate(72,-63.74)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>为200 nm，比未织构器件(18.1 mA/cm)大约1.7倍<S.。up>2</S.。up>)．据我们所知，我们工作中的装置达到了最高水平<S.。vg height="14.35" id="M99" style="vertical-align:-3.22281pt;width:18.299999px;" version="1.1" viewbox="0 0 18.299999 14.35" width="18.299999" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.2,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>使用纳米柱p-n结。</P.。><P.。>简而言之，纳米线被示出通过改善反射/吸收行为来改善太阳能电池性能的高潜力。具有适当的设计，差的质量硅显示可接受，并且性能不会降低，但扩散长度低至0.6 <i>μ</i>实验证明，与平面电池相比，短路电流提高了1.7×。</P.。><H5.id="sec3.2">3.2。垂直纳米线基热电冷却/热电一代</H5.><P.>随着3D电子产品，可植入的生物分析装置和半导体激光器等高热通量场中的加重，通用电子设备的热图变得非常不均匀，并且对设备的性能有害[<一种HR.E.F=“#B61">61.</一种>］.除了越来越多的需要冷却当地的热点而产生的，还有更具吸引力的机会来收获剩余的热量。然而，由于电流散装材料的低热电转换效率，并且由于缺乏适当的CMOS兼容材料，芯片水平收获尚未得到可行的。</P.。><P.。>热电冷却/热电产生（TEC / TEG）的基本原理基于珀耳或塞贝克效应，其中所有电流都伴随着热流，反之亦然。热电装置可以通过热量通过电流转换或冷却器在电流转换之间交替，通过电流携带热量[<一种HR.E.F=“#B62">62.</一种>］.热电模块的效率由无量纲图ZT决定，即，<S.。vg height="14.075" id="M100" style="vertical-align:-0.17555pt;width:48.862499px;" version="1.1" viewbox="0 0 48.862499 14.075" width="48.862499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.075)"> <g transform="translate(72,-60.74)"> <text transform="matrix(1,0,0,-1,-71.95,60.96)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-62.95,66.03)"> <tspan style="font-size: 8.75px; " x="0" y="0"> 2</T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-58.07,60.96)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="7.3267579" y="0"> </T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="14.203408" y="0"> /</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 12.50px; " x="17.679241" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>，在哪里<S.。vg height="10.725" id="M101" style="vertical-align:-0.1254pt;width:11.375px;" version="1.1" viewbox="0 0 11.375 10.725" width="11.375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.725)"> <g transform="translate(72,-63.42)"> <text transform="matrix(1,0,0,-1,-71.95,63.6)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>那<S.。vg height="6.9875002" id="M102" style="vertical-align:-0.13794pt;width:9.3000002px;" version="1.1" viewbox="0 0 9.3000002 6.9875002" width="9.3000002" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,6.9875)"> <g transform="translate(72,-66.41)"> <text transform="matrix(1,0,0,-1,-71.95,66.6)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>那<S.。vg height="10.7375" id="M103" style="vertical-align:-0.13794pt;width:8.6000004px;" version="1.1" viewbox="0 0 8.6000004 10.7375" width="8.6000004" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.7375)"> <g transform="translate(72,-63.41)"> <text transform="matrix(1,0,0,-1,-71.95,63.6)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>那<S.。vg height="10.325" id="M104" style="vertical-align:-0.0pt;width:11.225px;" version="1.1" viewbox="0 0 11.225 10.325" width="11.225" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.325)"> <g transform="translate(72,-63.74)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>，塞培克系数，电导率，导热率和绝对温度。商业最先进的热电材料 - Bi，Te，Sb和Se的合金在室温下具有Zt≥1[<一种HR.E.F=“#B62">62.</一种>］.然而，这些材料很难处理和加工，就像在半导体行业广泛使用的硅技术一样。尽管热电材料的性能在其本体形式上受到限制，但其低维纳米结构似乎优于预期[<一种HR.E.F=“#B63">63.</一种>］.硅，从未考虑过散装形式的热电应用，已成为纳米级的潜在竞争者。研究表明，50 nm宽的SINW的导热率减少了2个订单（到a<S.。vg height="10.7375" id="M105" style="vertical-align:-0.13794pt;width:8.6000004px;" version="1.1" viewbox="0 0 8.6000004 10.7375" width="8.6000004" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,10.7375)"> <g transform="translate(72,-63.41)"> <text transform="matrix(1,0,0,-1,-71.95,63.6)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>为1.6 W/mK)， ZT值由本体材料的0.01提高到1。巨大的减少<S.。vg height="7.0124998" id="M106" style="vertical-align:-0.0pt;width:9.4125004px;" version="1.1" viewbox="0 0 9.4125004 7.0124998" width="9.4125004" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,7.0125)"> <g transform="translate(72,-66.39)"> <text transform="matrix(1,0,0,-1,-71.95,66.44)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>是由于声子在纳米尺度上的边界散射效应[<一种HR.E.F=“#B64">64.</一种>-<一种HR.E.F=“#B69">69.</一种>］.这一重要发现为芯片级热电能量收集开辟了一个窗口，潜力将电位集成到传统的电子电路中。用硅作为TEG材料，使用BI<S.。ub>2</S.。ub>te.<S.。ub>3.</S.。ub>可避免使用基材。</P.。><P.。>我们最近报告了基于SINW的TEG的自上而下的CMOS兼容集成技术[<一种HR.E.F=“#B70">70</一种>]，其原理流程及SEM图像如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig23/" target="_blank">23.</一种>．P和N Sinw元件通过铝和通过选择性硅化形成的金属 - 硅化物连接在顶部。基于SINW的TEG是高度可扩展的，并且由于与其他CMOS IC的易于集成而具有可容易的芯片电平冷却和发电。完成设备的显微镜图像如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig24/" target="_blank">24（a）</一种>在图中测量期间堆叠细节<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig24/" target="_blank">24（b）</一种>．它的总表面积为5 mm × 5 mm(60%填充掺杂导线)，由162个热电偶组成。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig23"> <div class="floats-partial-content fig-content-fig23"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0023a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0023b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(c)“N一种mE.=“4.9.21.21。Fig.0023c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023c.jpg"> <br> <strong>(c)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（d）“N一种mE.=“4.9.21.21。Fig.0023d" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023d.jpg"> <br> <strong>（d）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（e）“N一种mE.=“4.9.21.21。Fig.0023e" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023e.jpg"> <br> <strong>（e）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（F）“N一种mE.=“4.9.21.21。Fig.0023f" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023f.jpg"> <br> <strong>（F）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（G）“N一种mE.=“4.9.21.21。Fig.0023g" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023g.jpg"> <br> <strong>（G）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（H）“N一种mE.=“4.9.21.21。Fig.0023h" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023h.jpg"> <br> <strong>（H）</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="（一世）“N一种mE.=“4.9.21.21。Fig.0023i" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023i.jpg"> <br> <strong>（一世）</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig23"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0023a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0023b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(c)"><img alt="(c)“N一种mE.=“4.9.21.21。Fig.0023c" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023c.jpg"><br><strong>(c)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(d)"><img alt="（d）“N一种mE.=“4.9.21.21。Fig.0023d" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023d.jpg"><br><strong>（d）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(e)"><img alt="（e）“N一种mE.=“4.9.21.21。Fig.0023e" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023e.jpg"><br><strong>（e）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(f)"><img alt="（F）“N一种mE.=“4.9.21.21。Fig.0023f" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023f.jpg"><br><strong>（F）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(g)"><img alt="（G）“N一种mE.=“4.9.21.21。Fig.0023g" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023g.jpg"><br><strong>（G）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(h)"><img alt="（H）“N一种mE.=“4.9.21.21。Fig.0023h" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023h.jpg"><br><strong>（H）</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(i)"><img alt="（一世）“N一种mE.=“4.9.21.21。Fig.0023i" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0023i.jpg"><br><strong>（一世）</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig23"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图23</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig23/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <a href="#B70">70</一种><T.一种ble> 制造的示意图(a) SiNW形成干蚀刻,(b)离子注入,P / N个元素定义,每个元素包含数百SiNW, (c) P / N夫妇由干蚀刻,(d) SiNW顶部和底部silicidation同时保护井壁,(e)介质沉积和蚀刻只暴露SiNW的顶端,和金属化。(f)柱形成的SEM图像，(g) N和P种植体在显微镜下可以清晰地看到，不同的阴影，(h) N/P种植后SiNW的SEM图像，(i)金属化蚀刻显示单个N/P对。插图显示了氧化蚀刻后SiNW暴露的尖端，证实了TEG的结构。(h)和(i)为试验结构图像，实际设计太大，无法在SEM图像中显示。（转载许可[］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <div class="floats-partial-section partial-carousel-wrapper" data-section="fig24"> <div class="floats-partial-content fig-content-fig24"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0024a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0024a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0024b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0024b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig24"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0024a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0024a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0024b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0024b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig24"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图24</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig24/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <a href="#B70">70</一种><T.一种ble> (a)已完成发电机组的简图(发电机组两侧有6个接线板，以便连接不同的区域)。连接端子1和5在5毫米× 5毫米区域内的几个蛇形P-和n -元件之间建立了一个欧姆通路。(b)实验设置中使用的不同层。在不同的层中表示的是在计算中使用的热阻。散热器热阻的计算是以铝为基础，尺寸为5cm × 5cm × 5mm。（转载许可[］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <p>该装置的发电特点是使用在单独的晶圆上设计和制作的铜加热器加热一侧，并连接到被测设备上。加热器模具也有温度测量装置。如图<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig25/" target="_blank">(25日)</一种>是开路电压，<S.。vg height="14.35" id="M107" style="vertical-align:-3.22281pt;width:20.0625px;" version="1.1" viewbox="0 0 20.0625 14.35" width="20.0625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>穿过TEG，在设备上产生不同的温度“DT”。正如预期的那样，增加了<S.。vg height="14.35" id="M108" style="vertical-align:-3.22281pt;width:20.0625px;" version="1.1" viewbox="0 0 20.0625 14.35" width="20.0625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>观察到DT增加。一种<S.。vg height="14.35" id="M109" style="vertical-align:-3.22281pt;width:20.0625px;" version="1.1" viewbox="0 0 20.0625 14.35" width="20.0625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>在整个实验装置的总体应用dT为70 K (SiNW为0.12 K)下，测量了1.5 mV。所有数据点的线性关系是由于S = dV/dT关系。其热阻值如图所示<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig24/" target="_blank">24（b）</一种>用S = dV/(NdT)来表示<S.。vg height="14.35" id="M110" style="vertical-align:-3.22281pt;width:20.0625px;" version="1.1" viewbox="0 0 20.0625 14.35" width="20.0625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>在设置（dt = 70k）上测量，提取TEG的有效塞贝克系数为39 <i>μ</i>V / K。在可比掺杂水平下，提取值低于报道的SiNW值[<一种HR.E.F=“#B64">64.</一种>］.然而，可以指出，实验装置中的每层具有其自身的界面热阻，其在TEG上的实际DT显着降低。因为它是第一演示，有一个可以改善界面热阻的空间，从而改善纳米线的DT。实际上，设想了超薄热电装置的想法，以直接集成在芯片上以进行直接能量收集。以这种方式，可以消除与实验设置相关的界面热阻。因此，可以增加SINW的有效DT。在图中<一种HR.E.F=“HT.T.P.S.://www.newsama.com/journals/jnt/2012/492121/fig25/" target="_blank">25 (b)</一种>，所产生的电压/功率在实验装置上以70k的总DT的电流函数绘制。在0.75 mV和2的电压和电流下实现1.5 nW的最大功率输出 <i>μ</i>分别一个。在我们的设备中，如果我们可以把dT延伸到1k，功率密度是1.2<i>μ</i>W /厘米<S.。up>2</S.。up>可以收获。然而，通过SiNW维持大dT以产生更大功率的能力是另一个需要考虑和优化的重要方面。</P.。><D.iv class="floats-partial-section partial-carousel-wrapper" data-section="fig25"> <div class="floats-partial-content fig-content-fig25"> <div class="partial-carousel--single-image"> <img alt="(一)“N一种mE.=“4.9.21.21。Fig.0025a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0025a.jpg"> <br> <strong>(一)</S.。T.。R.O.Ng> </div> <div class="partial-carousel--single-image"> <img alt="(b)“N一种mE.=“4.9.21.21。Fig.0025b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0025b.jpg"> <br> <strong>(b)</S.。T.。R.O.Ng> </div> </div> <div class="floats-partial-middle"> <div class="floats-partial-middle--thumbs fig-thumbs-fig25"> <button class="partial-carousel-dot" aria-label="(a)"><img alt="(一)“N一种mE.=“4.9.21.21。Fig.0025a" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0025a.jpg"><br><strong>(一)</S.。T.。R.O.Ng></button> <button class="partial-carousel-dot" aria-label="(b)"><img alt="(b)“N一种mE.=“4.9.21.21。Fig.0025b" src="https://static-01.hindawi.com/articles/jnt/volume-2012/492121/figures/492121.fig.0025b.jpg"><br><strong>(b)</S.。T.。R.O.Ng></button> </div> <div class="partial-carousel-next-prev fig-nav-fig25"> <button class="carousel-prev" aria-label="Previous"></button> <button class="carousel-next" aria-label="Next"></button> </div> </div> <div class="floats-partial-footer"> <div class="floats-partial-caption"> <span class="caption-text">图25</S.。P.。一种N><一种一种R.ia-label="full view" class="caption-partial-url" href="//www.newsama.com/journals/jnt/2012/492121/fig25/" title="" target="_blank"></a> </div> <div class="floats-partial-caption-text"> <svg height="14.35" id="M111" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 20.0625 14.35" width="20.0625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="14.35" id="M112" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 20.0625 14.35" width="20.0625" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <svg height="14.35" id="M113" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 17.362499 14.35" width="17.362499" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> S.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="3.4045279" y="0"> C</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg> <i>μ</i> <a href="#B70">70</一种><T.一种ble> (a) TEG的图与跨过它的不同DT（实际/估计）相反。通过所有数据点绘制最佳拟合线。（b）当DT（估计）为0.12 k时，电压/功率与电流曲线和1。5.。mV和3.79分别一个。黑线是线性配合，红色线为数据点的多项式拟合。（转载许可[］.[2011] IEEE。）</T.。一种ble> </div> </div> </div> <p>简而言之，使用CMOS兼容的自上而下工艺制造Sinw Teg。Seebeck效应被证明，并测量发电。随着顶部金属化和纳米线之间的低导热率材料的进一步改进，例如聚酰亚胺，可以实现优异的纳米级热电能收割机。这种SINW TEG可以是经济效益，可扩展的，并且可能更容易集成。通过以下（晶圆背面）的潜在集成（晶圆背面）传统的高热通量电路，这些纳米级发电机可以为超低功耗的IC和自动电路提供定位特定的热收集和铺设方式。</P.。><H4.id="challenges-and-opportunities">4.挑战和机遇</H4.><P.>在制备技术和对GAA纳米线器件的静电和输运的理解方面取得了重大进展;在这种新的设备架构达到制造水平之前，还需要面对巨大的挑战。第一个挑战是阈值电压和器件参数的大变异性<S.。vg height="14.35" id="M114" style="vertical-align:-3.22282pt;width:22.8375px;" version="1.1" viewbox="0 0 22.8375 14.35" width="22.8375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-65.95,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> O.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="4.3759999" y="0"> N</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>据报道[<一种HR.E.F=“#B10">10.</一种>］.这种可变性主要归因于纳米线形状，尺寸/直径，粗糙度和界面质量变化的可能变化。使用H的高级光刻和表面平滑的起始柱尺寸紧密控制<S.。ub>2</S.。ub>退火(<一种HR.E.F=“#B71">71.</一种>可能有助于减少这种变异。实际上，从各个方面控制器件参数对纳米线直径的灵敏度(由光刻技术定义，通常有±5%的变化)是很大的。柱状图案的光刻工艺窗口差是晶圆片临界尺寸变化的主要原因之一。然而，解决这一问题的方法之一是使用硬掩模模式来改变模式的极性。特定可变设计的使用，如8个晶体管SRAM [<一种HR.E.F=“#B72">72.</一种>或概率电路设计技术，如神经形态设计[<一种HR.E.F=“#B73">73.</一种>，可以成为成功将GAA纳米线设备应用于可制造电路的解决方案的一部分。</P.。><P.。>第二个挑战涉及阈值电压的调谐。由于通道体积非常有限，通道的掺杂<S.。vg height="14.35" id="M115" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>调整不可行。由于圆柱形架构，栅极氧化物厚度的影响<S.。vg height="14.35" id="M116" style="vertical-align:-3.22281pt;width:18.3375px;" version="1.1" viewbox="0 0 18.3375 14.35" width="18.3375" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(1.25,0,0,-1.25,0,14.35)"> <g transform="translate(72,-60.52)"> <text transform="matrix(1,0,0,-1,-71.95,63.79)"> <tspan style="font-size: 12.50px; " x="0" y="0"> </T.。S.。P.。一种N></T.E.xt> <text transform="matrix(1,0,0,-1,-64.76,60.66)"> <tspan style="font-size: 8.75px; " x="0" y="0"> T.</T.。S.。P.。一种N><T.S.P.一种N style="font-size: 8.75px; " x="2.4943199" y="0"> H</T.。S.。P.。一种N></T.E.xt> </g> </g> </svg>预计也将大幅减少。可行的解决方法是调整栅极工作函数和线径。</P.。><P.。>第三个挑战是垂直纳米线器件的源极和漏极电阻之间的固有不对称，如果剖面控制不好，通道直径也不对称。在电路设计中必须考虑到这些不对称，因此设计师有机会提出新颖的设计解决方案。进一步，垂直线显示为自然平台的TFET;电路设计的挑战可能是巨大的TFET将不能工作作为通过晶体管在两个方向。设计mosfet和tfet的混合电路可能是解决这个问题的解决方案之一。</P.。><P.。>电子领域挑战的问题几乎没有影响能量收获，或者甚至可能有利。例如，关键尺寸变化不应影响太阳能效率，并且由于导热性降低而预期热电发电会随着表面粗糙度而改善[<一种HR.E.F=“#B64">64.</一种>那<一种HR.E.F=“#B65">65.</一种>］.虽然本文没有回顾，但纳米线在锂离子电池中作为阳极的使用是另一个高潜力的应用，上面描述的任何问题都不会产生任何影响[<一种HR.E.F=“#B9">9.</一种>］.纳米线还提供机会从功能或性能透视或硅平台上的各种类型的设备共同构成各种类型的设备。例如，Si / III-V和GE电线共同集成可以在GE / III-V和GE线上的PMOS上提供高性能电子器件。值得一提的是，这种异质整合可以限于底部向上的技术，因为顶部下降将需要在硅上需要晶片水平选择性外延沉积这些材料在硅上一直是挑战，因为晶格密码丝晶片。</P.。><H4.id="summary">5.总结</H4.><P.>综述了采用自顶向下方法开发的垂直GAA纳米线技术平台的现状。讨论了基于绿色CMOS的电子垂直平台的面积、速度和功率优势。除了出色的MOSFET缩放电位外，垂直导线被预测为fet器件的自然平台，显示出创纪录的低阈下斜率。综述了非易失性存储单元的研究进展，认为无结线存储器将是一个良好的三维堆叠平台。纳米线似乎有可能在低成本的太阳能和热能收集方面有新的解决方案。目前自上而下的技术可以潜在地解决“硅的末端技术路线图”的需求，并超越CMOS时代，可能导致一个全纳米线自主系统，其中数据计算、数据存储、能量收集和能量存储都可以通过使用纳米线设备实现，所有集成在芯片上，或在同一水平或不同，使用TSV，如果不是直接。因此，纳米线技术表明了为硅技术开辟新的应用机会的可行性。</P.。><H4.id="acknowledgment">承认</H4.><P.>作者感谢新加坡微电子研究所半导体工艺技术实验室在样品制备和分析方面的支持。</P.。></D.iv> <div class="xml-content"> <h4 class="references" id="references">参考文献</H4.><O.l> <li id="B1">E. 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height="24"><span class="text">下载引用</S.。P.。一种N></S.P.一种N><span class="sc-htoDjs bqeMOy sc-dqBHgY cQgXqt fileArrow icon-colored _3P4iUn1NDM5G77nWCamJ4l icon-themeable" title="" font-size="20"></span></a> <a class="sc-htpNat bUhGXt link sc-jtRfpW dIjoCg sc-BngTV hmDWcT ref_desktop" href="//www.newsama.com/journals/jnt/2012/492121.ris" aria-label="" target="" id="toolbar__dcNavSmall"><span><img alt="" class="sc-EHOje jOLhQl sc-kTUwUJ eujois" title="" role="presentation" src="data:image/svg+xml;base64,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" height="24"><span class="text">引文</S.。P.。一种N></S.P.一种N><span class="sc-htoDjs bqeMOy sc-dqBHgY cQgXqt fileArrow icon-colored _3P4iUn1NDM5G77nWCamJ4l icon-themeable" title="" font-size="20"></span></a> </div> </div> <div class="journal_article__ArticleStickyBottomToolbar-sc-12fk6zy-1 isgRZA article_sticky_bottom_toolbar"> <div class="sc-cTjmhe ihmyEq article_bottom_toolbar"> <div class="sc-cugefK itFKcQ accordion" property="background-color" color="#D8D8D8" id="toolbar__dofNav"> <span><img alt="" class="sc-EHOje jOLhQl sc-bfYoXt cGuwDn" title="" role="presentation" src="data:image/svg+xml;base64,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" height="24"><span class="sc-dRFtgE jrsDZP">下载其他格式</S.。P.。一种N><S.P.一种NClass="sc-gkFcWv gWTCXQ">更多的</S.。P.。一种N></S.P.一种N> <span class="sc-htoDjs bMdQcY sc-gbOuXE jGPvPL icon-colored _1CwL9R82TPl2HxDleeYGDR icon-themeable" title="" font-size="11"></span> </div> <div class="sc-fnwBNb etzuBr"> <a class="sc-htpNat bUhGXt link sc-iNhVCk gWgCNb open_panel" href="//www.newsama.com/downloads/journals/jnt/2012/492121.epub" aria-label="ePub" property="background-color" color="#D8D8D8"> <div class="sc-eAKXzc WHkfb"> epub.</D.iv><img alt="" class="sc-EHOje jOLhQl sc-bfYoXt cGuwDn" title="" role="presentation" 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height="24"><span class="sc-dRFtgE jrsDZP">订单印刷副本</S.。P.。一种N><S.P.一种NClass="sc-gkFcWv gWTCXQ">订单</S.。P.。一种N></S.P.一种N><span class="sc-htoDjs kNoiZu sc-gbOuXE jGPvPL right__icon icon-colored _32KP5uexH-Bgs7Kj8Gk1Tz icon-themeable" title="" font-size="16"></span></a> <div class="sc-hBbWxd kdRRST"> <div class="sc-dyGzUR cHatnS"> <div> 意见<S.。P.。一种N>3657</S.。。P.。一种N></D.iv> <div> 下载<S.。P.。一种N>6400</S.。。P.。一种N></D.iv> </div> <div> <div class="sc-drKuOJ kxdGAZ"> <span class="__dimensions_badge_embed__" data-doi="10.1155/2012/492121" data-style="small_circle"></span>引用</D.iv> </div> </div> <nav class="sc-bRBYWo fXBKFa sc-hUfwpO jHPgUP" id="toolbar__iconNav"> <h3 class="sc-Rmtcm hNPrIr">分享文章</H3.><ul class="sc-hzDkRC bnbfTS"> <li class="iconBorder"><a class="sc-htpNat bUhGXt link" href="https://twitter.com/share?url=https://doi.org/10.1155/2012/492121&via=Hindawi" aria-label="Sharing on Twitter" rel="noopener noreferrer" target="_blank"><img alt="" class="sc-EHOje jOLhQl socialTwitter" title="" 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