TY - Jour A2 - Li，Yongxiang Au - Persano，Anna Au - Squaranta，Fabio Au - Cola，Adriano Au - Taurino，Antonietta Au - De Angelis，Giorgio Au - Marcelli，Romolo Au - Siciliano，Pietro Py - 2010 DA - 2010/ 12/28 ti - ta₂O._5.用于电容式RF MEMS开关SP-487061 VL-2010 AB - 分流电容RF MEMS开关的薄膜已经使用III-V技术和使用（钽五氧化二钽）TA开发₂O._5.薄膜作为介电层。为了评估TA的潜力₂O._5.已经进行了考虑的薄膜，已经进行了沉积膜的组成，结构和电学表征，证明它们是用作制造RF MEMS开关的介电层的良好候选。具体而言，Ta.₂O._5.发现薄膜显示漏电流密度少数Na / cm²为了 E. 〜 1  MV/cm and a high dielectric constant of 32. Moreover, the charging process has been investigated, finding that it follows a stretched exponential law. The fabricated switches show actuation voltages in the range 15–20 V, an insertion loss better than −0.8 dB up to 30 GHz, and an isolation of ~−40 dB at the resonant frequency which is around 25 GHz. SN - 1687-725X UR - https://doi.org/10.1155/2010/487061 DO - 10.1155/2010/487061 JF - Journal of Sensors PB - Hindawi Publishing Corporation KW - ER -