TY - JOUR A2 - Miroshnichenko, Andrey E. AU - Arora, Swati AU - Jaimini, Vivek AU - Srivastava, Subodh AU - Vijay, Y. K. PY - 2017 DA - 2017/03/22 TI - Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation SP - 4276506 VL - 2017 AB - Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth. SN - 1687-9503 UR - https://doi.org/10.1155/2017/4276506 DO - 10.1155/2017/4276506 JF - Journal of Nanotechnology PB - Hindawi KW - ER -