TY - JOUR A2 - Ghibaudo，杰拉德AU - KARSENTY，A. AU - 谢伊，A. PY - 2013 DA - 2013年6月2日TI - 在门凹陷纳米SOI电气特性和串联电阻通道厚度的影响建模MOSFETs SP - 801634 VL - 2013 AB - Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern. SN - 0882-7516 UR - https://doi.org/10.1155/2013/801634 DO - 10.1155/2013/801634 JF - Active and Passive Electronic Components PB - Hindawi Publishing Corporation KW - ER -