TY - JOUR A2 - Korostynsk，奥尔加AU - 廉，阿南德AU - 坎特利，裴家D. AU - 沃格尔，埃里克M. PY - 2013 DA - 2013年4月29日TI - 逻辑门和环振荡器基于对双极性纳米结晶硅的TFT SP - 525017 VL - 2013 AB - 纳米晶硅（n-Si）薄膜晶体管（TFT）非常适用于需要中等器件性能和低温CMOS兼容低于250℃处理电路的应用程序。Basic logic gate circuits fabricated using ambipolar nc-Si TFTs alone are presented and shown to operate with correct outputs at frequencies of up to 100 kHz. Ring oscillators consisting of nc-Si TFT-based inverters are also shown to operate at above 20 kHz with a supply voltage of 5 V, corresponding to a propagation delay of <10  μS /台。这些纳米晶硅的TFT的形成了迄今为止最快电路。The effect of bias stress degradation of TFTs on oscillation frequency is also explored, and relatively stable operation is shown with supply voltages >5 V for several hours. SN - 0882-7516 UR - https://doi.org/10.1155/2013/525017 DO - 10.1155/2013/525017 JF - Active and Passive Electronic Components PB - Hindawi Publishing Corporation KW - ER -