TY - JOUR A2 - 弘，林俊卫AU - 马悦然，R. AU - Samuelsson先生，C AU - 古斯塔夫森，A. AU - 佳莉，P. AU - Reyaz，S. AU - Vähä-Heikkilä，T. AU - 里德伯，A. AU - 瓦里斯，J. AU - 史密斯，D. AU - Baggen，R. PY - 2011 DA - 2011/12/26 TI - A K波段RF-MEMS的可重构启用和多功能低噪声放大器混合Circuit SP - 284767 VL - 2011 AB - A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P 1 D b at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption. SN - 0882-7516 UR - https://doi.org/10.1155/2011/284767 DO - 10.1155/2011/284767 JF - Active and Passive Electronic Components PB - Hindawi Publishing Corporation KW - ER -