TY - JOUR A2 - 加尔佩林，尤里AU - 法拉兹，萨迪亚Muniza AU - 沙阿，Wakeel AU - ALVI，函数naveed的UI哈桑AU - 努尔，奥马尔AU - 瓦哈卜，卡马尔的UI PY - 2020 DA - 2020年4月13日TI - 电气已经执行了对硅（Si）和正氧化锌（ZnO）的纳米棒异质结二极管的电特性 - 6410573 VL - - 2020 AB的Si /氧化锌纳米棒pn异质结二极管SP的表征。ZnO纳米棒是由含水化学生长（ACG）法生长在p硅衬底。的SEM图像揭示了高密度，垂直排列的六边形ZnO纳米棒具有约1.2的平均高度  μ米/正ZnO纳米棒的电学表征的p-Si异质结二极管由电流 - 电压（I-V），电容 - 电压（C-V），以及电导 - 电压（G-V）在室温下测量完成。The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (N_SS）的导带（CB）下面用I-V和C-V和G-V测量的帮助下提取。The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 10¹²to 5.83 × 10¹¹ eV^-1 cm^-2were obtained from 0.01 eV to 0.55 eV below the conduction band. SN - 1687-8108 UR - https://doi.org/10.1155/2020/6410573 DO - 10.1155/2020/6410573 JF - Advances in Condensed Matter Physics PB - Hindawi KW - ER -